Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation

Simple item page
dc.contributor.authorJohnson, BCen_AU
dc.contributor.authorMcCallum, JCen_AU
dc.contributor.authorAtanacio, AJen_AU
dc.contributor.authorPrince, KEen_AU
dc.date.accessioned2020-09-02T23:33:35Zen_AU
dc.date.available2020-09-02T23:33:35Zen_AU
dc.date.issued2009-09-10en_AU
dc.date.statistics2020-08-06en_AU
dc.description.abstractThe concentration dependence of H diffusion in amorphous Si (a-Si) formed by ion implantation is reported for implanted H profiles. An empirical relationship is proposed which relates the diffusion coefficient to the H concentration valid up to 0.3 at. %. B-enhanced H diffusion is observed and shows trends with temperature typically associated with a Fermi level shifting dependence. A modified form of the generalized Fermi level shifting model is applied to these data. The Department of Electronic Materials Engineering at the Australian National University is acknowledged for providing access to ion implanting facilities. This work was supported by grants from the Australian Research Council and the Australian Institute of Nuclear Science and Engineering (Award No. AINGRA08035). © 2009 American Institute of Physicsen_AU
dc.identifier.articlenumber101911en_AU
dc.identifier.citationJohnson, B. C., McCallum, J. C., Atanacio, A. J., & Prince, K. E. (2009). Intrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantation. Applied Physics Letters, 95(10), 101911. doi:org/10.1063/1.3224189en_AU
dc.identifier.govdoc9865en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.issue10en_AU
dc.identifier.journaltitleApplied Physics Lettersen_AU
dc.identifier.pagination1-4en_AU
dc.identifier.urihttps://doi.org/10.1063/1.3224189en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/9764en_AU
dc.identifier.volume95en_AU
dc.language.isoenen_AU
dc.publisherAmerican Institute of Physicsen_AU
dc.subjectChemical bondsen_AU
dc.subjectIon implantationen_AU
dc.subjectEpitaxyen_AU
dc.subjectIon sourcesen_AU
dc.subjectActivation energyen_AU
dc.subjectNanofluidicsen_AU
dc.subjectDiffusionen_AU
dc.titleIntrinsic and boron-enhanced hydrogen diffusion in amorphous silicon formed by ion implantationen_AU
dc.typeJournal Articleen_AU
Files
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Journal Articles