Band alignments of different buffer layers (CdS, Zn(O,S), and In2S3) on Cu2ZnSnS4

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dc.contributor.authorYan, Cen_AU
dc.contributor.authorLiu, Fen_AU
dc.contributor.authorSong, Nen_AU
dc.contributor.authorNg, Ben_AU
dc.contributor.authorStride, JAen_AU
dc.contributor.authorTadich, Aen_AU
dc.contributor.authorHao, Xen_AU
dc.date.accessioned2016-12-15T00:35:02Zen_AU
dc.date.available2016-12-15T00:35:02Zen_AU
dc.date.issued2014-04-01en_AU
dc.date.statistics2016-12-15en_AU
dc.description.abstractThe heterojunctions of different n-type buffers, i.e., CdS, Zn(O,S), and In2S3 on p-type Cu2ZnSnS4 (CZTS) were investigated using X-ray Photoelectron Spectroscopy (XPS) and Near Edge X-ray Absorption Fine Structure (NEXAFS) Measurements. The band alignment of the heterojunctions formed between CZTS and the buffer materials was carefully measured. The XPS data were used to determine the Valence Band Offsets (VBO) of different buffer/CZTS heterojunctions. The Conduction Band Offset (CBO) was calculated indirectly by XPS data and directly measured by NEXAFS characterization. The CBO of the CdS/CZTS heterojunction was found to be cliff-like with CBOXPS¼ 0.2460.10 eV and CBONEXAFS¼ 0.1860.10 eV, whereas those of Zn(O,S) and In2S3 were found to be spike-like with CBOXPS¼0.9260.10 eV and CBONEXAFS¼0.8760.10 eV for Zn(O,S)/CZTS and CBOXPS¼0.4160.10 eV for In2S3/CZTS, respectively. The CZTS photovoltaic device using the spike-like In2S3 buffer was found to yield a higher open circuit voltage (Voc) than that using the cliff-like CdS buffer. However, the CBO of In2S3/CZTS is slightly higher than the optimum level and thus acts to block the flow of light-generated electrons, significantly reducing the short circuit current (Jsc) and Fill Factor (FF) and thereby limiting the efficiency. Instead, the use of a hybrid buffer for optimization of band alignment is proposed. © 2014, AIP Publishing LLC.en_AU
dc.identifier.articlenumber173901en_AU
dc.identifier.citationYan, C., Liu, F., Song, N., Ng, B. K., Stride, J. A., Tadich, A., & Hao, X. (2014). Band alignments of different buffer layers (CdS, Zn(O,S), and In2S3) on Cu2ZnSnS4. Applied Physics Letters, 104(17), 173901. doi:10.1063/1.4873715en_AU
dc.identifier.govdoc7706en_AU
dc.identifier.issn173901en_AU
dc.identifier.issue17en_AU
dc.identifier.journaltitleApplied Physics Lettersen_AU
dc.identifier.urihttp://dx.doi.org/10.1063/1.4873715en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/8153en_AU
dc.identifier.volume104en_AU
dc.language.isoenen_AU
dc.publisherThermo Scientificen_AU
dc.subjectHeterojunctionsen_AU
dc.subjectX-ray diffractionen_AU
dc.subjectPhotoelectron spectroscopyen_AU
dc.subjectDataen_AU
dc.subjectElectronsen_AU
dc.subjectPhotovoltaic effecten_AU
dc.titleBand alignments of different buffer layers (CdS, Zn(O,S), and In2S3) on Cu2ZnSnS4en_AU
dc.typeJournal Articleen_AU
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