Examining the role of ultra-thin atomic layer deposited metal oxide barrier layers on CdTe/ITO interface stability during the fabrication of solution processed nanocrystalline solar cells

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dc.contributor.authorChambers, BAen_AU
dc.contributor.authorMacDonald, Ben_AU
dc.contributor.authorIonescu, Men_AU
dc.contributor.authorDeslandes, Aen_AU
dc.contributor.authorQuiton, Jen_AU
dc.contributor.authorJasieniak, JJen_AU
dc.contributor.authorAndersson, GGen_AU
dc.date.accessioned2015-01-27T22:26:40Zen_AU
dc.date.available2015-01-27T22:26:40Zen_AU
dc.date.issued2014-06-01en_AU
dc.date.statistics2015-01-28en_AU
dc.description.abstractSolution processed CdTe layers are a potentially low-cost alternative for use in thin-film solar cells. We have recently reported the use of such nanocrystalline layers within ITO/CdTe/ZnO/Al device architectures. One key concern with this type of device structure is the possibility of atomic scale interdiffusion between the ITO and CdTe layers, which can result in deleterious n-type doping of the CdTe layer. Rutherford Backscattering has been used to study the chemical composition across the ITO/CdTe interface as a function of thermal annealing temperature. Through these measurements we verify that interdiffision is observed across the interface for annealing temperatures above 200 degrees C, and the extent of interdiffusion increases with temperature. Ultra-thin alumina, zirconia and titania layers deposited between the ITO and CdTe layers have been studied for their potential to act as a diffusion barrier. All investigated barriers successfully suppress interdiffusion. The outcomes of these compositional studies are directly compared to solar cells fabricated under analogous processing conditions, demonstrating improved cell performance. © 2014, Elsevier Ltd.en_AU
dc.identifier.citationChambers, B.A., MacDonald, B.I., Ionescu, M., Deslandes, A., Quinton, J.S., Jasieniak, J.J., & Andersson, G.G. (2014). Examining the role of ultra-thin atomic layer deposited metal oxide barrier layers on CdTe/ITO interface stability during the fabrication of solution processed nanocrystalline solar cells. Solar Energy Materials and Solar Cells, 125, 164-169. doi:10.1016/j.solmat.2014.02.018en_AU
dc.identifier.govdoc5860en_AU
dc.identifier.issn0927-0248en_AU
dc.identifier.journaltitleSolar Energy Materials and Solar Cellsen_AU
dc.identifier.pagination164-169en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/j.solmat.2014.02.018en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/6117en_AU
dc.identifier.volume125en_AU
dc.language.isoenen_AU
dc.publisherElsevier Science BVen_AU
dc.subjectSolar cellsen_AU
dc.subjectOxidesen_AU
dc.subjectDiffusion barriersen_AU
dc.subjectCadmiumen_AU
dc.subjectTelluriumen_AU
dc.subjectFilmsen_AU
dc.titleExamining the role of ultra-thin atomic layer deposited metal oxide barrier layers on CdTe/ITO interface stability during the fabrication of solution processed nanocrystalline solar cellsen_AU
dc.typeJournal Articleen_AU
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