Electrical properties and defect chemistry of indium-doped TiO2: electrical conductivity

Simple item page
dc.contributor.authorNowotny, Jen_AU
dc.contributor.authorMalik, Aen_AU
dc.contributor.authorAlim, MAen_AU
dc.contributor.authorBak, Ten_AU
dc.contributor.authorAtanacio, AJen_AU
dc.date.accessioned2014-10-27T02:16:38Zen_AU
dc.date.available2014-10-27T02:16:38Zen_AU
dc.date.issued2014-08-13en_AU
dc.date.statistics2014-10-27en_AU
dc.description.abstractThis work reports the electrical conductivity of indium-doped TiO2 at elevated temperatures (1023 K - 1273 K) and in the gas phase of controlled oxygen activity in the range 10(-16) Pa<p(O-2)<10(5) Pa. The effect of indium on charge transport in TiO2 is considered in terms of the electrical conductivity components related to electrons, electron holes and ions. It is shown that addition of 0.4 at% of indium to TiO2 results in a shift of the n-p transition point toward lower values of oxygen activity by the factor of about 10. The obtained experimental data in oxidizing conditions are consistent with the mechanism of indium incorporation into the titanium sublattice leading to the formation of acceptor energy levels. However, the determined effect of indium on the ionic conductivity component indicates that indium is incorporated into interstitial sites resulting in the formation of donors. The reported data may be used for processing TiO2 with controlled properties that are desired for specific applications. © 2014, Electrochemical Society Inc.en_AU
dc.identifier.citationNowotny, J., Malik, A., Alim, M. A., Bak, T., & Atanacio, A. J. (2014). Electrical properties and defect chemistry of indium-doped TiO2: electrical conductivity. ECS Journal of Solid State Science and Technology, 3(10), 330-339. doi:10.1149/2.0191410jssen_AU
dc.identifier.govdoc5777en_AU
dc.identifier.issn2162-8769en_AU
dc.identifier.issue10en_AU
dc.identifier.journaltitleECS Journal of Solid State Science and Technologyen_AU
dc.identifier.paginationP330-P339en_AU
dc.identifier.urihttp://dx.doi.org/10.1149/2.0191410jssen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/5957en_AU
dc.identifier.volume3en_AU
dc.language.isoenen_AU
dc.publisherThe Electochemical Societyen_AU
dc.subjectRutileen_AU
dc.subjectMonocrystalsen_AU
dc.subjectTitaniumen_AU
dc.subjectTemperature rangeen_AU
dc.subjectWateren_AU
dc.subjectCatalystsen_AU
dc.subjectKineticsen_AU
dc.subjectReactivityen_AU
dc.titleElectrical properties and defect chemistry of indium-doped TiO2: electrical conductivityen_AU
dc.typeJournal Articleen_AU
Files
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Journal Articles