Retention and damage in 3C-β SiC irradiated with He and H ions

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dc.contributor.authorDeslandes, Aen_AU
dc.contributor.authorGuenette, MCen_AU
dc.contributor.authorThomsen, Len_AU
dc.contributor.authorIonescu, Men_AU
dc.contributor.authorKaratchevtseva, Ien_AU
dc.contributor.authorLumpkin, GRen_AU
dc.date.accessioned2019-09-04T00:07:11Zen_AU
dc.date.available2019-09-04T00:07:11Zen_AU
dc.date.issued2016-02-01en_AU
dc.date.statistics2019-09-01en_AU
dc.description.abstract3C-β SiC was implanted with He and H ions using plasma immersion ion implantation (PIII). Regions of damage were created at various depths by applying a sample stage bias of 5 kV, 10 kV, 20 kV or 30 kV. Raman spectroscopy results indicate that He irradiation leads to more damage compared to H irradiation, as observed via increased disordered C and Si signals, as well as broadening of the SiC peaks. X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure spectroscopy (NEXAFS) results indicate significant change to the SiC structure and that surface oxidation has occurred following irradiation, with the degree of change varying dependent on impinging He fluence. The distributions of implanted species were measured using elastic recoil detection analysis. Despite the varying degree and depth of damage created in the SiC by the He ion irradiations, the retained H distribution was observed to not be affected by preceding He implantation. © 2015 Elsevier B.V.en_AU
dc.identifier.citationDeslandes, A., Guenette, M. C., Thomsen, L., Ionescu, M., Karatchevtseva, I., & Lumpkin, G. R. (2016). Retention and damage in 3C-β SiC irradiated with He and H ions. Journal of Nuclear Materials, 469, 187-193. doi: 10.1016/j.jnucmat.2015.11.022en_AU
dc.identifier.govdoc8996en_AU
dc.identifier.issn0022-3115en_AU
dc.identifier.journaltitleJournal of Nuclear Materialsen_AU
dc.identifier.pagination187-193en_AU
dc.identifier.urihttps://doi.org/10.1016/j.jnucmat.2015.11.022en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/9068en_AU
dc.identifier.volume469en_AU
dc.language.isoenen_AU
dc.publisherElsevier B.V.en_AU
dc.subjectIonsen_AU
dc.subjectIon implantationen_AU
dc.subjectPlasmaen_AU
dc.subjectOxidationen_AU
dc.subjectPhotoelectron spectroscopyen_AU
dc.subjectX-ray spectroscopyen_AU
dc.titleRetention and damage in 3C-β SiC irradiated with He and H ionsen_AU
dc.typeJournal Articleen_AU
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