High-purity CdMnTe radiation detectors: a high-resolution spectroscopic evaluation

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dc.contributor.authorRafiei, Ren_AU
dc.contributor.authorReinhard, MIen_AU
dc.contributor.authorKim, KHen_AU
dc.contributor.authorProkopovich, DAen_AU
dc.contributor.authorBoardman, DAen_AU
dc.contributor.authorSarbutt, Aen_AU
dc.contributor.authorWatt, GCen_AU
dc.contributor.authorBolotnikov, AEen_AU
dc.contributor.authorBignell, LJen_AU
dc.contributor.authorJames, RBen_AU
dc.date.accessioned2015-10-20T00:29:08Zen_AU
dc.date.available2015-10-20T00:29:08Zen_AU
dc.date.issued2013-02-07en_AU
dc.date.statistics2015-10-19en_AU
dc.description.abstractThe charge transport properties of a high-purity CdMnTe (CMT) crystal have been measured at room temperature down to a micron-scale resolution. The CMT crystal, doped with indium, was grown by the vertical Bridgman technique. To reduce the residual impurities in the Mn source material, the growth process incorporated a five-times purification process of MnTe by a zone-refining method with molten Te solvent. The resulting 2.6 mm thick crystal exhibited an electron mobility-lifetime product of μnτn=2.9 × 10-3 cm2V-1. The velocity of electron drift was calculated from the rise time distribution of the preamplifier's output pulses at each measured bias. The electron mobility was extracted from the electric field dependence of the drift velocity and at room temperature it has a value of μn=(950±90) cm2/Vs. High-resolution maps of the charge collection efficiency have been measured using a scanning microbeam of 5.5 MeV 4He2+ ions focused to a beam diameter <; 1 μm and display large-area spatial uniformity. The evolution of charge collection uniformity across the detector has been highlighted by acquiring measurements at applied biases ranging between 50 V and 1100 V. Charge transport inhomogeneity has been associated with the presence of bulk defects. It has been demonstrated that minimizing the content of impurities in the MnTe source material is highly effective in achieving major improvements in the CMT detector's performance as compared to previous data. © 2013, IEEE.en_AU
dc.identifier.citationRafiei, R., Reinhard, M. I., Kim, K., Prokopovich, D. A., Boardman, D., Sarbutt, A., Watt, G. C., Bolotnikov, A. E., Bignell, L. J., & James, R. B. (2013). High-purity CdMnTe radiation detectors: a high-resolution spectroscopic evaluation. IEEE Transactions on Nuclear Science, 60(2), 1450-1456. doi:10.1109/tns.2013.2243167en_AU
dc.identifier.govdoc6192en_AU
dc.identifier.issn0018-9499en_AU
dc.identifier.issue2en_AU
dc.identifier.journaltitleIEEE Transactions on Nuclear Scienceen_AU
dc.identifier.pagination1450-1456en_AU
dc.identifier.urihttp://dx.doi.org/10.1109/tns.2013.2243167en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/6344en_AU
dc.identifier.volume60en_AU
dc.language.isoenen_AU
dc.publisherIntistute of Electrical Engineersen_AU
dc.subjectGrowthen_AU
dc.subjectCrystalsen_AU
dc.subjectIndiumen_AU
dc.subjectDefectsen_AU
dc.subjectManganeseen_AU
dc.titleHigh-purity CdMnTe radiation detectors: a high-resolution spectroscopic evaluationen_AU
dc.typeJournal Articleen_AU
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