Accommodation of excess oxygen in fluorite dioxides
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Date
2013-12-15
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Elsevier
Abstract
Accommodation of excess oxygen in CeO2, ThO2 and UO2 has been investigated using ab-initio modelling. Calculations indicate that hyperstoichiometry is preferentially accommodated by the formation of peroxide species in CeO2 and ThO2 but not in UO2, where oxygen interstitial defects are dominant. Migration of the excess oxygen defects was also studied; the peroxide ion in CeO2 and ThO2 is transported via a different mechanism, due to the formation of peroxide molecules, to the oxygen interstitial in UO2. Frenkel pair defects were investigated to understand if the interstitial component could assume a peroxide like configuration in the vicinity of the vacancy. While it was already expected that this would not be the case for UO2 since peroxide was not stable, it was also not found to be the case for CeO2 and ThO2 with the peroxide disassociating into a lattice species and a separate interstitial ion. © 2013, Elsevier B.V.
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Keywords
Fluorine oxides, Simulation, Peroxides, Oxygen, Frenkel defects, Molecules
Citation
Middleburgh, S. C., Lumpkin, G. R., & Grimes, R. W. (2013). Accommodation of excess oxygen in fluorite dioxides. Solid State Ionics, 253, 119-122. doi:10.1016/j.ssi.2013.09.020