Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon

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dc.contributor.authorPastuovic, Zen_AU
dc.contributor.authorCapan, Ien_AU
dc.contributor.authorSiegele, Ren_AU
dc.contributor.authorJacimovic, Ren_AU
dc.contributor.authorForneris, Jen_AU
dc.contributor.authorCohen, DDen_AU
dc.contributor.authorVittone, Een_AU
dc.date.accessioned2016-10-13T01:10:13Zen_AU
dc.date.available2016-10-13T01:10:13Zen_AU
dc.date.issued2014-08-01en_AU
dc.date.statistics2016-10-13en_AU
dc.description.abstractDeep Level Transient Spectroscopy (DLTS) has been used to study defects formed in bulk silicon after implantation of 8.3 MeV 28Si3+ ions at room temperature. For this study, Schottky diodes prepared from n-type Czohralski-grown silicon wafers have been implanted in the single ion regime up to fluence value of 1 × 1010 cm−2 utilizing the scanning focused ion microbeam as implantation tool and the Ion Beam Induced Current (IBIC) technique for ion counting. Differential DLTS analysis of the vacancy-rich region in self-implanted silicon reveals a formation of the broad vacancy-related defect state(s) at Ec −0.4 eV. Direct measurements of the electron capture kinetics associated with this trap at Ec −0.4 eV, prior to any annealing do not show an exponential behaviour typical for the simple point-like defects. The logarithmic capture kinetics is in accordance with the theory of majority carrier capture at extended or cluster-related defects. We have detected formation of two deep electron traps at Ec −0.56 eV and Ec −0.61 eV in the interstitial-rich region of the self-implanted silicon, before any annealing. No DLTS signal originating from vacancy-oxygen trap at Ec −0.17 eV, present in the sample irradiated with 0.8 MeV neutrons, has been recorded in the self-implanted sample. © 2014, Elsevier B.V.en_AU
dc.identifier.citationPastuovic, Z., Capan, I., Siegele, R., Jacimovic, R., Forneris, J., Cohen, D. D., & Vittone, E. (2014). Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon. Paper presented at the 21st International Conference on Ion Beam Analysis (IBA 2013), June 23-28 2013, Seattle, Washington, USA. In Thevuthasan, T., Shutthanandan, S., Wang, Y., Vizkelethy, G., Rout, B. (Eds), Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 332, 298-302. doi:10.1016/j.nimb.2014.02.082en_AU
dc.identifier.conferenceenddate28 June 2013en_AU
dc.identifier.conferencename21st International Conference on Ion Beam Analysis (IBA 2013)en_AU
dc.identifier.conferenceplaceSeattle, Washington, USAen_AU
dc.identifier.conferencestartdate23 June 2013en_AU
dc.identifier.editorsThevuthasan, T., Shutthanandan, S., Wang, Y., Vizkelethy, G., Rout, B.en_AU
dc.identifier.govdoc7286en_AU
dc.identifier.issn0168-583Xen_AU
dc.identifier.journaltitleNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atomsen_AU
dc.identifier.pagination298-302en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/j.nimb.2014.02.082en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/7724en_AU
dc.identifier.volume332en_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectSpectroscopyen_AU
dc.subjectSiliconen_AU
dc.subjectRadiationsen_AU
dc.subjectIonsen_AU
dc.subjectKineticsen_AU
dc.subjectNeutronsen_AU
dc.titleGeneration of vacancy cluster-related defects during single MeV silicon ion implantation of siliconen_AU
dc.typeConference paperen_AU
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