Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

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dc.contributor.authorPastuovic, Zen_AU
dc.contributor.authorCapan, Ien_AU
dc.contributor.authorCohen, DDen_AU
dc.contributor.authorForneris, Jen_AU
dc.contributor.authorIwamoto, Nen_AU
dc.contributor.authorOhshima, Ten_AU
dc.contributor.authorSiegele, Ren_AU
dc.contributor.authorHoshino, Nen_AU
dc.contributor.authorTsuchida, Hen_AU
dc.date.accessioned2015-09-01T02:52:53Zen_AU
dc.date.available2015-09-01T02:52:53Zen_AU
dc.date.issued2015-04-01en_AU
dc.description.abstractWe studied the radiation hardness of 4H-SiC Schottky barrier diodes (SBD) for the light ion detection and spectroscopy in harsh radiation environments. n-Type SBD prepared on nitrogen-doped (similar to 4 x 10(14) cm(-3)) epitaxial grown 4H-SiC thin wafers have been irradiated by a raster scanning alpha particle microbeam (2 and 4 MeV He2+ ions separately) in order to create patterned damage structures at different depths within a sensitive volume of tested diodes. Deep Level Transient Spectroscopy (DLTS) analysis revealed the formation of two deep electron traps in the irradiated and not thermally treated 4H-SiC within the ion implantation range (E1 and E2). The E2 state resembles the well-known Z(1/2) center, while the E1 state could not be assigned to any particular defect reported in the literature. Ion Beam Induced Charge (IBIC) microscopy with multiple He ion probe microbeams (1-6 MeV) having different penetration depths in tested partly damaged 4H-SiC SBD has been used to determine the degradation of the charge collection efficiency (CCE) over a wide fluence range of damaging alpha particle. A non-linear behavior of the CCE decrease and a significant degradation of the spectroscopic performance with increasing He ion fluence were observed above the value of 10(11) cm(-2). © 2015 Published by Elsevier B.V.en_AU
dc.identifier.citationPastuovic, Z., Capan, I., Cohen, D. D., Forneris, J., Iwamoto, N., Ohshima, T., Siegele, R., Hoshino, N., & Tsuchida, H. (2015). Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam. Paper presented to the 14th International Conference on Nuclear Microprobe Technology & Applications, 6-11 July 2014, Palazzo del Bo and Centro Culturale San Gaetano, Padova, Italy. In Butz, T., Reinert, T., & Spemann, D. (Eds), Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 348, 233-239. doi:10.1016/j.nimb.2014.12.064en_AU
dc.identifier.conferenceenddate11 July 2014en_AU
dc.identifier.conferencename14th International Conference on Nuclear Microprobe Technology & Applications 2014en_AU
dc.identifier.conferenceplacePalazzo del Bo and Centro Culturale San Gaetano, Padova, Italy.en_AU
dc.identifier.conferencestartdate6 July 2014en_AU
dc.identifier.editorsButz, T., Reinert, T., & Spemann, D.en_AU
dc.identifier.govdoc6008en_AU
dc.identifier.issn0168-583Xen_AU
dc.identifier.journaltitleNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atomsen_AU
dc.identifier.pagination233-239en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/j.nimb.2014.12.064en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/6159en_AU
dc.identifier.volume348en_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectSilicon carbidesen_AU
dc.subjectIon beamsen_AU
dc.subjectRadiation effectsen_AU
dc.subjectRadiation hardnessen_AU
dc.subjectSchottky barrier diodesen_AU
dc.subjectDeep level transient spectroscopyen_AU
dc.titleRadiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeamen_AU
dc.typeConference Paperen_AU
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