Radiation hardness of n-type SiC Schottky diodes

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dc.contributor.authorPastuovic, Zen_AU
dc.contributor.authorVittone, Een_AU
dc.contributor.authorSiegele, Ren_AU
dc.contributor.authorOhshima, Ten_AU
dc.contributor.authorIwamoto, Nen_AU
dc.contributor.authorForneris, Jen_AU
dc.contributor.authorCohen, DDen_AU
dc.contributor.authorCapan, Ien_AU
dc.date.accessioned2017-03-06T23:15:15Zen_AU
dc.date.available2017-03-06T23:15:15Zen_AU
dc.date.issued2014-07-07en_AU
dc.date.statistics2017-03-07en_AU
dc.description.abstractThe results of recent IBIC and DLTS studies of radation damage in silicon carbide (SiC) diodes will be presented. n-type Schottky diodes prepared on an epitaxial grown 4H-SiC thin wafers have been irradiated by a raster scanned alpha particle microbeam (2 & 4 MeV He2+ ions separately) in order to create patterned damage structures at different depths within sensitive volume of tested diodes suitable for Ion Beam Induced Current (IBIC) microscopy. Deep level transient spectroscopy (DLTS) was used to characterize defects created in SiC after implantation of single alpha particles. Robust and proven IBIC experimental protocol [1] has been used to determine a degradation of the charge collection efficiency over a wide fluence range of damaging alpha particle. The radiation hardness of these SiC wafers is compared with the hardness of n-type silicon wafers grown by the Floating zone and Czochralski methods obtained by the same experimental protocol. A suitability of as prepared SiC diodes for the light ion detection and spectroscopy in the MeV range will be discussed from the perspecetive of applications in harsh radiation environments.en_AU
dc.identifier.citationPastuović, Z., Vittone, E., Capan, I., Siegele, R., Ohshima, T., Iwamoto, N., Forneris, J., Cohen, D. (2014). Radiation hardness of n-type SiC Schottky Diodes. Paper presented at the 14th International Conference on Nuclear Microprobe Technology and Applications & International Workshop on Proton Beam Writing, July 7-11, 2014, Padova, Italy.en_AU
dc.identifier.conferenceenddate11 July 2014en_AU
dc.identifier.conferencename14th International Conference on Nuclear Microprobe Technology and Applications & International Workshop on Proton Beam Writingen_AU
dc.identifier.conferenceplacePadova, Italyen_AU
dc.identifier.conferencestartdate7 July 2014en_AU
dc.identifier.govdoc7983en_AU
dc.identifier.urihttps://agenda.infn.it/event/6545/attachments/45942/54375/ICNMTA2014-book-of-abstract.pdfen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/8417en_AU
dc.language.isoenen_AU
dc.publisherCoop Libraria Editrice Universita di padovaen_AU
dc.subjectRadiolysisen_AU
dc.subjectSpectroscopyen_AU
dc.subjectDeep level transient spectroscopyen_AU
dc.subjectSilicon carbidesen_AU
dc.subjectSchottky barrier diodesen_AU
dc.subjectIon beamsen_AU
dc.subjectIrradiationen_AU
dc.subjectCzochralski methoden_AU
dc.subjectMicroscopyen_AU
dc.titleRadiation hardness of n-type SiC Schottky diodesen_AU
dc.typeConference Paperen_AU
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