Electrical properties and defect chemistry of indium-doped TiO2, thermoelectric power

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dc.contributor.authorNowotny, Jen_AU
dc.contributor.authorAlim, MAen_AU
dc.contributor.authorBak, Ten_AU
dc.contributor.authorAtanacio, AJen_AU
dc.contributor.authorMalik, Aen_AU
dc.date.accessioned2016-05-17T06:13:04Zen_AU
dc.date.available2016-05-17T06:13:04Zen_AU
dc.date.issued2014-12-30en_AU
dc.date.statistics2016-05-17en_AU
dc.description.abstractThis work studied the effect of indium on the semiconducting properties of TiO2 (rutile) at elevated temperatures (1023-1273 K) in the gas phase of controlled oxygen activity in the range of 10(-16) Pa< p(O-2)< 10(5) Pa. The studies were performed using the measurements of thermoelectric power of In-doped TiO2 (0.4 at.% In) as a function of oxygen activity and temperature. The obtained data indicates that indium is incorporated into the TiO2 lattice according to the dual mechanism leading to the formation of donors and acceptors in the interface (surface and grain boundary) layer and the bulk phase, respectively. This effect is considered in terms of a quasi-isolated surface layer that differs from the bulk phase in terms of semiconducting properties and the related defect disorder. © 2014 Springer Nature Switzerland AG.en_AU
dc.identifier.citationNowotny, J., Alim, M. A., Bak, T., Atanacio, A. J., & Malik, A. (2015). Electrical properties and defect chemistry of indium-doped TiO2 center dot thermoelectric power. Ionics, 21(7), 2019-2029. doi:10.1007/s11581-014-1351-5en_AU
dc.identifier.govdoc6580en_AU
dc.identifier.issn1862-0760en_AU
dc.identifier.issue7en_AU
dc.identifier.journaltitleIonicsen_AU
dc.identifier.pagination2019-2029en_AU
dc.identifier.urihttps://doi.org/10.1007/s11581-014-1351-5en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/6817en_AU
dc.identifier.volume21en_AU
dc.language.isoenen_AU
dc.publisherSpringer Nature Switzerland AGen_AU
dc.subjectElectrical propertiesen_AU
dc.subjectChemistryen_AU
dc.subjectIndiumen_AU
dc.subjectDoped materialsen_AU
dc.subjectThermoelectricityen_AU
dc.subjectOxygenen_AU
dc.subjectRutileen_AU
dc.titleElectrical properties and defect chemistry of indium-doped TiO2, thermoelectric poweren_AU
dc.typeJournal Articleen_AU
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