The measurement of minority carrier diffusion lengths for high purity GaAs, using an electron beam induced current technique

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dc.contributor.authorButcher, KSAen_AU
dc.contributor.authorAlexiev, Den_AU
dc.contributor.authorTansley, Tlen_AU
dc.contributor.authorSeung, Sen_AU
dc.date.accessioned2020-04-21T05:54:24Zen_AU
dc.date.available2020-04-21T05:54:24Zen_AU
dc.date.issued1990-07-01en_AU
dc.date.statistics2101-06-01en_AU
dc.description.abstractMeasurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current technique. The GaAs material was grown by liquid phase epitaxy at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for the n-type materials show good agreement with past results for material of similar purity. For higher purity p-type and n-type samples, diffusion lengths were observed which are larger than any previously reported. For different electron beam voltages the observed values of diffusion length were unaffected by surface recombination. This again indicates very pure material. The diffusion length measurements reported here indicate that the LPE GaAs samples being produced by the Australian Nuclear Science and Technology Organisation's Radiation Detectors Project are of the highest quality for producing X-rays and low energy gamma ray radiation detectors. 20 refs., 2 tabs., 4 figsen_AU
dc.identifier.citationButcher, K. S. A., Alexiev, D., Tansley, T. L., & Leung. (1980). The measurement of minority carrier diffusion lengths for high purity GaAs, using an electron beam induced current technique (ANSTO/E693). Lucas Heights, NSW: Australian Nuclear Science and Technology Organisation.en_AU
dc.identifier.govdoc9361en_AU
dc.identifier.issn6429559068en_AU
dc.identifier.issn1030-7745en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/9357en_AU
dc.language.isoenen_AU
dc.publisherAustralian Nuclear Science and Technology Organisationen_AU
dc.relation.ispartofseriesANSTO/E693;en_AU
dc.subjectANSTOen_AU
dc.subjectArsenic compoundsen_AU
dc.subjectCrystal growth methodsen_AU
dc.subjectDataen_AU
dc.subjectElectron microscopyen_AU
dc.subjectGallium compoundsen_AU
dc.subjectMicroscopyen_AU
dc.subjectParticle beamsen_AU
dc.titleThe measurement of minority carrier diffusion lengths for high purity GaAs, using an electron beam induced current techniqueen_AU
dc.typeExternal Reporten_AU
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