Effect of oxygen activity on surface composition of in-doped TiO2 at elevated temperatures

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dc.contributor.authorAtanacio, AJen_AU
dc.contributor.authorNowotny, Jen_AU
dc.contributor.authorPrince, KEen_AU
dc.date.accessioned2014-04-04T03:20:59Zen_AU
dc.date.available2014-04-04T03:20:59Zen_AU
dc.date.issued2012-09-13en_AU
dc.date.statistics2014-04-04en_AU
dc.description.abstractThe present work reports the effect of oxygen activity on the segregation-induced surface concentration of indium for In-doped TiO2 at different time intervals (5-120 h) of annealing at 1273 K. It is shown that equilibrium segregation of indium in oxidizing conditions, p(O-2) = 21 kPa, is established within 20 h. However, annealing in reducing conditions, p(O-2) = 10(-10) Pa, does not lead to equilibrium segregation due to indium evaporation, which becomes substantial at p(O-2) < 10(2) Pa. In these conditions, annealing results in an initial rise of surface concentration due to segregation and subsequent decrease due to evaporation. These data may be used for the modification of surface vs bulk composition of In-doped TiO2 in a controlled manner. © 2012, American Chemical Society.en_AU
dc.identifier.citationAtanacio, A. J., Nowotny, J., & Prince, K. E. (2012). Effect of oxygen activity on surface composition of in-doped TiO2 at elevated temperatures. Journal of Physical Chemistry C, 116(36), 19246-19251. doi:10.1021/jp302724jen_AU
dc.identifier.govdoc4649en_AU
dc.identifier.issn1932-7447en_AU
dc.identifier.issue36en_AU
dc.identifier.journaltitleJournal of Physical Chemistry Cen_AU
dc.identifier.pagination19246-19251en_AU
dc.identifier.urihttp://dx.doi.org/0.1021/jp302724jen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/5404en_AU
dc.identifier.volume116en_AU
dc.language.isoenen_AU
dc.publisherAmerican Chemical Societyen_AU
dc.subjectOxygenen_AU
dc.subjectSegregationen_AU
dc.subjectIndiumen_AU
dc.subjectOxidizersen_AU
dc.subjectHydrogenen_AU
dc.subjectEquilibriumen_AU
dc.titleEffect of oxygen activity on surface composition of in-doped TiO2 at elevated temperaturesen_AU
dc.typeJournal Articleen_AU
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