The importance of scattering, surface potential, and vanguard counter-potential in terahertz emission from gallium arsenide

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dc.contributor.authorCortie, DLen_AU
dc.contributor.authorLewis, RAen_AU
dc.date.accessioned2014-04-11T05:38:40Zen_AU
dc.date.available2014-04-11T05:38:40Zen_AU
dc.date.issued2012-06-25en_AU
dc.date.statistics2014-04-11en_AU
dc.description.abstractIt is well established that under excitation by short (<1 ps), above-band-gap optical pulses, semiconductor surfaces may emit terahertz-frequency electromagnetic radiation via photocarrier diffusion (the dominant mechanism in InAs) or photocarrier drift (dominant in GaAs). Our three-dimensional ensemble Monte Carlo simulations allow multiple physical parameters to vary over wide ranges and provide unique direct insight into the factors controlling terahertz emission. We find for GaAs (in contrast to InAs), scattering and the surface potential are key factors. We further delineate in GaAs (as in InAs) the role of a vanguard counter-potential. The effects of varying dielectric constant, band-gap, and effective mass are similar in both emitter types. © 2012, American Institute of Physics.en_AU
dc.identifier.articlenumber261601en_AU
dc.identifier.citationCortie, D. L., & Lewis, R. A. (2012). The importance of scattering, surface potential, and vanguard counter-potential in terahertz emission from gallium arsenide. Applied Physics Letters, 100(26), Article Number 261601. doi:/10.1063/1.4730954en_AU
dc.identifier.govdoc4640en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.issue26en_AU
dc.identifier.journaltitleApplied Physics Lettersen_AU
dc.identifier.urihttp://dx.doi.org/10.1063/1.4730954en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/5423en_AU
dc.identifier.volume100en_AU
dc.language.isoenen_AU
dc.publisherAmerican Institute of Physicsen_AU
dc.subjectMonte Carlo Methoden_AU
dc.subjectTHz rangeen_AU
dc.subjectCarriersen_AU
dc.subjectDielectric materialsen_AU
dc.subjectElectromagnetic radiationen_AU
dc.subjectBeam emittanceen_AU
dc.subjectSemiconductor materialsen_AU
dc.titleThe importance of scattering, surface potential, and vanguard counter-potential in terahertz emission from gallium arsenideen_AU
dc.typeJournal Articleen_AU
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