Fabrication and characterisation of diluted magnetic semiconductors thin films using ion beams

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dc.contributor.authorIonescu, Men_AU
dc.contributor.authorPhotongkam, Pen_AU
dc.contributor.authorSiegele, Ren_AU
dc.contributor.authorDeslandes, Aen_AU
dc.contributor.authorLi, Sen_AU
dc.contributor.authorCohen, DDen_AU
dc.date.accessioned2012-05-14T04:49:12Zen_AU
dc.date.available2012-05-14T04:49:12Zen_AU
dc.date.issued2012-01-01en_AU
dc.date.statistics2012-05-14en_AU
dc.description.abstractThe intrinsic n-type (II-VI) semiconductor ZnO may become ferromagnetic at room temperature, by small additions of magnetic ions, resulting in what is called a Diluted Magnetic Semiconductors (DMS). The potential application of DMS in spintronic devices of is driving the research effort to dope magnetic elements into this semiconductors with a depth distribution as uniform as possible. The doping levels and the depth distribution of dopants are critical parameters for the magnetic properties of this material and the possible clustering of dopants can play a significant negative role in its macroscopic magnetic properties. Thin ZnO (0001) films of between 100nm and 500nm, grown on c-Al2O3 by MOCVD were implanted with Co, Eu and Co+Eu by ion irradiation at low energies. In order to improve the depth distribution of dopants, the ion implantation was carried out through a number of appropriately chosen range foils. The results show an increase in the level of dopant homogeneity throughout the entire thickness of the film, and a ferromagnetic behavior above room temperature for Zn0.96Co0.04O, Zn0.96Eu0.04O and Zn0.92Co0.04Eu0.04O. © 2012, Trans Tech Publicationsen_AU
dc.identifier.citationIonescu, M., Photongkam, P., Siegele, R., Deslandes, A., Li, S., & Cohen, D. D. (2012). Fabrication and characterisation of diluted magnetic semiconductors thin films using ion beams. Paper presented to the International Conference on processing & manufacturing of advanced materials (THERMEC’2011), 1st-5th August 2011. Quebec City, Canada. In T. Chandra, M. Ionescu and D. Mantovani. (Eds), THERMEC 2011: Materials Science Forum, 706-709, 2869. doi:10.4028/www.scientific.net/MSF.706-709.2869en_AU
dc.identifier.conferenceenddate29 August 2009en_AU
dc.identifier.conferencenameInternational Conference on Processing & Manufacturing of Advanced Materials (Thermec' 2009)en_AU
dc.identifier.conferenceplaceBerlin, Germanyen_AU
dc.identifier.conferencestartdate25 August 2009en_AU
dc.identifier.govdoc4242en_AU
dc.identifier.isbn978-3-03785-303-0en_AU
dc.identifier.issn1662-9752en_AU
dc.identifier.journaltitleMaterials Science Forumen_AU
dc.identifier.pagination2869-2873en_AU
dc.identifier.placeofpublicationBerlin, Germanyen_AU
dc.identifier.urihttp://dx.doi.org/10.4028/www.scientific.net/MSF.706-709.2869en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/4233en_AU
dc.identifier.volume1en_AU
dc.language.isoenen_AU
dc.publisherTrans Tech Publication Inc.en_AU
dc.subjectIon beamsen_AU
dc.subjectMagnetic propertiesen_AU
dc.subjectMagnetic semiconductorsen_AU
dc.subjectThin filmsen_AU
dc.subjectFerromagnetic materialsen_AU
dc.subjectZinc oxidesen_AU
dc.titleFabrication and characterisation of diluted magnetic semiconductors thin films using ion beamsen_AU
dc.typeConference Paperen_AU
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