Characterisation of single-crystal mercuric iodide

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dc.contributor.authorAlexiev, Den_AU
dc.contributor.authorDytlewski, Nen_AU
dc.contributor.authorReinhard, MIen_AU
dc.contributor.authorMo, Len_AU
dc.date.accessioned2010-08-24T00:17:44Zen_AU
dc.date.available2010-08-24T00:17:44Zen_AU
dc.date.issued2004-01-21en_AU
dc.date.statistics2004-01-21en_AU
dc.description.abstractThe mobility-lifetime product of electrons and holes in single-crystal mercuric iodide for detector applications was measured to be 4×10−5 and 3×10−5 cm2/V respectively. The charge carriers were optically induced by a near band gap excitation using a GaP (560 nm) light emitting diode. Optical Deep Level Transient Spectrometry measurements of trapping states showed three dominant energy levels at 0.26, 0.8 and 1.4 eV. There is little correlation between trapping levels reported in the literature. © 2004, Elsevier Ltd.en_AU
dc.identifier.citationAlexiev, D., Dytlewski, N., Reinhard, M. I., & Mo, L. (2004). Characterisation of single-crystal mercuric iodide. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 517(1-3), 226-229. doi:10.1016/j.nima.2003.09.049en_AU
dc.identifier.govdoc2522en_AU
dc.identifier.issn0168-9002en_AU
dc.identifier.issue1-3en_AU
dc.identifier.journaltitleNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipmenten_AU
dc.identifier.pagination226-229en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/j.nima.2003.09.049en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/2322en_AU
dc.identifier.volume517en_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectHGI2 semiconductor detectorsen_AU
dc.subjectTrappingen_AU
dc.subjectDeep level transient spectroscopyen_AU
dc.subjectMonocrystalsen_AU
dc.subjectElectronsen_AU
dc.subjectLight emitting diodesen_AU
dc.titleCharacterisation of single-crystal mercuric iodideen_AU
dc.typeJournal Articleen_AU
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