Studies of the characteristics of a silicon neutron sensor

Simple item page
dc.contributor.authorAnokhin, Ien_AU
dc.contributor.authorZinets, Oen_AU
dc.contributor.authorRosenfeld, ABen_AU
dc.contributor.authorLerch, MLFen_AU
dc.contributor.authorYudelev, Men_AU
dc.contributor.authorPerevertaylo, VLen_AU
dc.contributor.authorReinhard, MIen_AU
dc.contributor.authorPetasecca, Men_AU
dc.date.accessioned2010-04-01T01:57:32Zen_AU
dc.date.accessioned2010-04-30T05:09:00Zen_AU
dc.date.available2010-04-01T01:57:32Zen_AU
dc.date.available2010-04-30T05:09:00Zen_AU
dc.date.issued2009-08-18en_AU
dc.date.statistics2009-08-18en_AU
dc.description.abstractElectrical characteristics and neutron dosimetry properties of silicon based p-i-n diodes are presented in support of the applications in the sensors for beam monitoring and medical physics. Both the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of silicon planar p-i-n diode sensors with cylindrical geometry have been theoretically modeled and experimentally measured. The shifts of the forward and reverse diode characteristics of the sensors versus the neutron dose have been obtained. It is shown that the neutron irradiation caused shift of the forward voltage of the p-i-n diodes is proportional to the current at which it is measured in the case of the low level injection or to the square root of the current in the case of the high level injection. The C-V characteristics and the full depletion voltages of the diodes have been estimated and experimentally verified. It is shown that the sensitivity of planar cylindrical structures as neutron sensors can be optimized by the selection of the device geometry and the current at which the measurement is performed. © 2009, Institute of Electrical and Electronics Engineers (IEEE)en_AU
dc.identifier.citationAnokhin, I., Zinets, O., Rosenfeld, R., Lerch, M., Yudelev, M., Perevertaylo, V., Reinhard, M., & Petasecca, M. (2009). Studies of the characterisation of a silicon neutron sensor. IEEE Transactions on Nuclear Science, 56(4), 2290-2293. doi:10.1109/TNS.2009.2024150en_AU
dc.identifier.govdoc1580en_AU
dc.identifier.issn0018-9499en_AU
dc.identifier.issue3-4en_AU
dc.identifier.journaltitleIEEE Transactions on Nuclear Scienceen_AU
dc.identifier.pagination345-359en_AU
dc.identifier.urihttp://dx.doi.org/10.1109/TNS.2009.2024150en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/3018en_AU
dc.identifier.volume98en_AU
dc.language.isoenen_AU
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_AU
dc.subjectSiliconen_AU
dc.subjectNeutron dosimetryen_AU
dc.subjectElectric potentialen_AU
dc.subjectIrradiationen_AU
dc.subjectRadiation detectorsen_AU
dc.subjectElectron densityen_AU
dc.titleStudies of the characteristics of a silicon neutron sensoren_AU
dc.typeJournal Articleen_AU
Files
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.79 KB
Format:
Plain Text
Description:
Download
Collections
Journal Articles