In situ micro-Raman analysis and x-ray diffraction of nickel silicide thin films on silicon.

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dc.contributor.authorBhaskaran, Men_AU
dc.contributor.authorSriram, Sen_AU
dc.contributor.authorPerova, TSen_AU
dc.contributor.authorErmakov, Ven_AU
dc.contributor.authorThorogood, GJen_AU
dc.contributor.authorShort, KTen_AU
dc.contributor.authorHolland, ASen_AU
dc.date.accessioned2010-04-01en_AU
dc.date.accessioned2010-04-30T05:08:58Zen_AU
dc.date.available2010-04-01en_AU
dc.date.available2010-04-30T05:08:58Zen_AU
dc.date.issued2009-01en_AU
dc.date.statistics2009-01en_AU
dc.description.abstractThis article reports on the in situ analysis of nickel silicide (NiSi) thin films formed by thermal processing of nickel thin films deposited on silicon substrates. The in situ techniques employed for this study include micro-Raman spectroscopy (μRS) and X-ray diffraction (XRD); in both cases the variations for temperatures up to 350°C has been studied. Nickel silicide thin films formed by vacuum annealing of nickel on silicon were used as a reference for these measurements. In situ analysis was carried out on nickel thin films on silicon, while the samples were heated from room temperature to 350°C. Data was gathered at regular temperature intervals and other specific points of interest (such as 250°C, where the reaction between nickel and silicon to form Ni2Si is expected). The transformations from the metallic state, through the intermediate reaction states, until the desired metal–silicon reaction product is attained, are discussed. The evolution of nickel silicide from the nickel film can be observed from both the μRS and XRD in situ studies. Variations in the evolution of silicide from metal for different silicon substrates are discussed, and these include (1 0 0) n-type, (1 0 0) p-type, and (1 1 0) p-type silicon substrates. © 2009, Elsevier Ltd.en_AU
dc.identifier.citationBhaskaran, M., Sriram, S., Perova, T. S., Ermakov, V., Thorogood, G. J., Short, K. T., & Holland, A. S. (2009). In situ micro-Raman analysis and x-ray diffraction of nickel silicide thin films on silicon. Micron, 40(1), 89-93. doi:10.1016/j.micron.2008.03.007en_AU
dc.identifier.govdoc1578en_AU
dc.identifier.issn0968-4328en_AU
dc.identifier.issue1en_AU
dc.identifier.journaltitleMicronen_AU
dc.identifier.pagination89-93en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/j.micron.2008.03.007en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/3016en_AU
dc.identifier.volume40en_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectNickel silicidesen_AU
dc.subjectThin filmsen_AU
dc.subjectX-ray diffractionen_AU
dc.subjectRaman spectroscopyen_AU
dc.subjectSiliconen_AU
dc.subjectAnnealingen_AU
dc.titleIn situ micro-Raman analysis and x-ray diffraction of nickel silicide thin films on silicon.en_AU
dc.typeJournal Articleen_AU
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