Cylindrical silicon-on-insulator microdosimeter: design, fabrication and TCAD modeling

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dc.contributor.authorLim, WHen_AU
dc.contributor.authorZiebell, ALen_AU
dc.contributor.authorCornelius, IMen_AU
dc.contributor.authorReinhard, MIen_AU
dc.contributor.authorProkopovich, DAen_AU
dc.contributor.authorDzurak, ASen_AU
dc.contributor.authorRosenfeld, ABen_AU
dc.date.accessioned2010-04-07T01:23:35Zen_AU
dc.date.accessioned2010-04-30T05:07:55Zen_AU
dc.date.available2010-04-07T01:23:35Zen_AU
dc.date.available2010-04-30T05:07:55Zen_AU
dc.date.issued2009-04en_AU
dc.date.statistics2009-04en_AU
dc.description.abstractA novel silicon-on-insulator (SOI) microdosimeter has been designed and fabricated using planar processing techniques to realise a device with a micron-scale well-defined sensitive volume. Cylindrical structures were employed to allow for an improved definition of the average chord length of the sensitive volume over that of previous elongated parallelepiped solid-state detector designs. The structures were manufactured on individual silicon mesas situated on top of a buried oxide insulating layer. The mesa design eliminated lateral charge diffusion. Two kinds of test structures were designed with sensitive region widths of 2 mum and 10 mum. In addition, an array of 900 cylindrical diodes was fabricated to increase the charge collection statistics. TCAD (Technology Computer Aided Design) modeling of the electrostatic potential and electric field profile of the cylindrical microdosimeter was carried out to obtain 3D potential and electric field profiles. The modeling revealed a radial electric field within the cylindrical-shaped sensitive volume with a 1/r dependence. While the electric field at the core of the cylindrical microdosimeter was not sufficiently high to induce avalanche signal multiplication, the higher electric field at the core should still assist in the measurement of low linear-energy transfer (LET) events. © 2009, Institute of Electrical and Electronics Engineers (IEEE)en_AU
dc.identifier.citationLim, W. H., Ziebell, A. L., Cornelius, I., Reinhard, M. I., Prokopovich, D. A., Dzurak, A. S., & Rosenfeld, A. B. (2009). Cylindrical silicon-on-insulator microdosimeter: design, fabrication and TCAD modeling. IEEE Transactions on Nuclear Science, 56(2), 424-428. doi:10.1109/TNS.2009.2013467en_AU
dc.identifier.govdoc1509en_AU
dc.identifier.issn0018-9499en_AU
dc.identifier.issue2en_AU
dc.identifier.journaltitleIEEE Transactions on Nuclear Scienceen_AU
dc.identifier.pagination424-428en_AU
dc.identifier.urihttp://dx.doi.org/10.1109/TNS.2009.2013467en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/3075en_AU
dc.identifier.volume56en_AU
dc.language.isoenen_AU
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_AU
dc.subjectCylindrical configurationen_AU
dc.subjectSiliconen_AU
dc.subjectMicrodosimetryen_AU
dc.subjectTownsend dischargeen_AU
dc.subjectComputer-aided designen_AU
dc.subjectElectric fieldsen_AU
dc.titleCylindrical silicon-on-insulator microdosimeter: design, fabrication and TCAD modelingen_AU
dc.typeJournal Articleen_AU
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