Structural characterization of Ge nanocrystals in silica amorphised by ion irradiation

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dc.contributor.authorAraujo, LLen_AU
dc.contributor.authorGiulian, Ren_AU
dc.contributor.authorJohannessen, Ben_AU
dc.contributor.authorLlewellyn, DJen_AU
dc.contributor.authorKluth, Pen_AU
dc.contributor.authorAzevedo, GDMen_AU
dc.contributor.authorCookson, DJen_AU
dc.contributor.authorRidgway, MCen_AU
dc.date.accessioned2009-07-22T04:35:36Zen_AU
dc.date.accessioned2010-04-30T05:07:00Zen_AU
dc.date.available2009-07-22T04:35:36Zen_AU
dc.date.available2010-04-30T05:07:00Zen_AU
dc.date.issued2008-06en_AU
dc.date.statistics2008-06en_AU
dc.description.abstractGe nanocrystals (NCs) grown by ion implantation in amorphous silica matrices were irradiated with 5 MeV Si ions over a different fluence range (2 x 10(11)-2 x 10(13) cm(-2)) than previously reported. Size and depth distributions as well as structural disorder in the NCs were measured by RBS, TEM, SAXS and EXAFS. The EXAFS results show that the embedded Ge NCs are rendered amorphous at fluences similar to 40 times lower than bulk crystalline Ge (c-Ge). No significant changes in the size or depth distribution of the NCs are observed for all irradiation fluences. Compared to c-Ge, the higher-energy structural state of the NCs prior to irradiation and the presence of the nanocrystal/matrix interface are considered the main causes for the peculiar amorphisation behavior of embedded Ge NCs. © 2008, Elsevier Ltd.en_AU
dc.identifier.citationAraujo, L. L., Giulian, R., Johannessen, B., Llewellyn, D. J., Kluth, P., Azevedo, G. D., Cookson, D. J. & Ridgway, M. C. (2008). Structural characterization of Ge nanocrystals in silica amorphised by ion irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 266(12-13), 3153-3157. doi:10.1016/j.nimb.2008.03.175en_AU
dc.identifier.govdoc1447en_AU
dc.identifier.issn0168-583Xen_AU
dc.identifier.issue12-13en_AU
dc.identifier.journaltitleNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atomsen_AU
dc.identifier.pagination3153-3157en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/j.nimb.2008.03.175en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/1553en_AU
dc.identifier.volume266en_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectSmall angle scatteringen_AU
dc.subjectGermaniumen_AU
dc.subjectSilicaen_AU
dc.subjectRutherford backscattering spectroscopyen_AU
dc.subjectIon implantationen_AU
dc.subjectTransmission electron microscopyen_AU
dc.titleStructural characterization of Ge nanocrystals in silica amorphised by ion irradiationen_AU
dc.typeJournal Articleen_AU
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