Measurement of latent tracks in amorphous SiO2 using small angle x-ray scattering

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dc.contributor.authorKluth, Pen_AU
dc.contributor.authorSchnohr, CSen_AU
dc.contributor.authorSprouster, DJen_AU
dc.contributor.authorByrne, APen_AU
dc.contributor.authorCookson, DJen_AU
dc.contributor.authorRidgway, MCen_AU
dc.date.accessioned2009-07-22T04:14:22Zen_AU
dc.date.accessioned2010-04-30T05:06:59Zen_AU
dc.date.available2009-07-22T04:14:22Zen_AU
dc.date.available2010-04-30T05:06:59Zen_AU
dc.date.issued2008-06en_AU
dc.date.statistics2008-06en_AU
dc.description.abstractIn this paper we present preliminary yet promising results on the measurement of latent ion tracks in amorphous, 2 mu m thick SiO2 layers using small angle X-ray scattering (SAXS). The tracks were generated by ion irradiation with 89 MeV An ions to fluences between 3 x 10(10) and 3 x 10(12) ions/cm(2). Transmission SAXS measurements show distinct scattering from the irradiated SiO2 as compared to the unirradiated material. Analysis of the SAXS spectra using a cylindrical model suggests a core-shell like density distribution in the ion tracks with a lower density core and a higher density shell as compared to unirradiated material. The total track radius of similar to 48 angstrom is in very good agreement with previous experiments and calculations based on an inelastic thermal spike model. © 2008, Elsevier Ltd.en_AU
dc.identifier.citationKluth, P., Schnohr, C. S., Sprouster, D. J., Byrne, A. P., Cookson, D. J., & Ridgway, M. C. (2008). Measurement of latent tracks in amorphous SiO2 using small angle x-ray scattering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 266(12-13), 2994-2997. doi:10.1016/j.nimb.2008.03.182en_AU
dc.identifier.govdoc1446en_AU
dc.identifier.issn0168-583Xen_AU
dc.identifier.issue12-13en_AU
dc.identifier.journaltitleNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atomsen_AU
dc.identifier.pagination2994-2997en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/j.nimb.2008.03.182en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/1552en_AU
dc.identifier.volume266en_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectSmall angle scatteringen_AU
dc.subjectThin filmsen_AU
dc.subjectEnergy absorptionen_AU
dc.subjectEnergy lossesen_AU
dc.subjectSiliconen_AU
dc.subjectAmorphous stateen_AU
dc.titleMeasurement of latent tracks in amorphous SiO2 using small angle x-ray scatteringen_AU
dc.typeJournal Articleen_AU
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