Oxygen incorporation in Ti2AlC thin films

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dc.contributor.authorRosen, Jen_AU
dc.contributor.authorPersson, POAen_AU
dc.contributor.authorIonescu, Men_AU
dc.contributor.authorKondyurin, Aen_AU
dc.contributor.authorMcKenzie, DRen_AU
dc.contributor.authorBilek, MMMen_AU
dc.date.accessioned2009-10-09T03:52:20Zen_AU
dc.date.accessioned2010-04-30T05:06:26Zen_AU
dc.date.available2009-10-09T03:52:20Zen_AU
dc.date.available2010-04-30T05:06:26Zen_AU
dc.date.issued2008-02-11en_AU
dc.date.statistics2008-02-11en_AU
dc.description.abstractThin films of Ti2AlC MAX phase have been deposited using a multiple cathode pulsed cathodic arc. Evidence for substantial oxygen incorporation in the MAX phase is presented, likely originating from residual gas present in the vacuum chamber during deposition. The characteristic MAX phase crystal structure is maintained, in agreement with ab initio calculations, supporting substitutional O in C lattice positions. On the basis of these results, we propose the existence of a MAX phase-like material with material properties tuned by the incorporation of oxygen. Additionally, possible unintentional O incorporation in previously reported MAX phase materials is suggested. © 2008, American Institute of Physicsen_AU
dc.identifier.citationRosen, J., Persson, P. O. A., Ionescu, M., Kondyurin, A., McKenzie, D. R., & Bilek, M. M. M. (2008). Oxygen incorporation in Ti2AlC thin films. Applied Physics Letters, 92(6), 3. doi:10.1063/1.2838456en_AU
dc.identifier.govdoc1412en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.issue6en_AU
dc.identifier.journaltitleApplied Physics Lettersen_AU
dc.identifier.pagination3en_AU
dc.identifier.urihttp://dx.doi.org/10.1063/1.2838456en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/1990en_AU
dc.identifier.volume92en_AU
dc.language.isoenen_AU
dc.publisherAmerican Institute of Physicsen_AU
dc.subjectThin filmsen_AU
dc.subjectOxygenen_AU
dc.subjectCathodesen_AU
dc.subjectCrystal structureen_AU
dc.subjectDepositionen_AU
dc.subjectCrystal latticesen_AU
dc.titleOxygen incorporation in Ti2AlC thin filmsen_AU
dc.typeJournal Articleen_AU
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