Electrical, optical and structural properties of lead iodide

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dc.contributor.authorMatuchova, Men_AU
dc.contributor.authorZdansky, Ken_AU
dc.contributor.authorZavadil, Jen_AU
dc.contributor.authorDanilewsky, Aen_AU
dc.contributor.authorMaixner, Jen_AU
dc.contributor.authorAlexiev, Den_AU
dc.date.accessioned2009-07-07T04:46:22Zen_AU
dc.date.accessioned2010-04-30T05:04:24Zen_AU
dc.date.available2009-07-07T04:46:22Zen_AU
dc.date.available2010-04-30T05:04:24Zen_AU
dc.date.issued2009-03en_AU
dc.date.statistics2009-03en_AU
dc.description.abstractLead iodide PbI2 is an excellent and interesting candidate for high efficiency room temperature detectors working in the medium energy range of 1 keV-1 MeV. It can be widely applied in medicine, monitoring ecology, nondestructive defectoscopy and X-ray and gamma spectroscopy. The peculiarities of this material are high resistivity, ability to work in a wide range of temperatures and high chemical stability. The method of preparation was direct synthesis from lead and iodine. The material was further purified by zone melting and grown by Bridgman-Stockbarger method. In this work we have concentrated on the study of the influence of dopants such as lanthanides (Er,Gd, Ho, Tb, Tm, Yb, GdI3, HoI3, GdI3) and elements of other groups, such as Au, Ag, Ge on the physical, electrical and optical properties of the PbI2. These were evaluated by resistivity and low temperature photoluminescence measurements. The Synchrotron X-ray topography was successfully introduced to study defects. The quality of the material was analyzed after synthesis, zone melting and growth. The dependence on the concentration of dopants was investigated too. © 2009, Springer.en_AU
dc.identifier.citationMatuchova, M., Zdansky, K., Zavadil, J., Danilewsky, A., Maixner, J., & Alexiev, D. (2009). Electrical, optical and structural properties of lead iodide. Journal of Materials Science: Materials in Electronics, 20(3), 289-294. doi:10.1007/s10854-008-9831-xen_AU
dc.identifier.govdoc1286en_AU
dc.identifier.issn0957-4522en_AU
dc.identifier.issue3en_AU
dc.identifier.journaltitleJournal of Materials Science: Materials in Electronicsen_AU
dc.identifier.pagination289-294en_AU
dc.identifier.urihttp://dx.doi.org/10.1007/s10854-008-9831-xen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/1470en_AU
dc.identifier.volume20en_AU
dc.language.isoenen_AU
dc.publisherSpringeren_AU
dc.subjectLead iodidesen_AU
dc.subjectSemiconductor detectorsen_AU
dc.subjectTopographyen_AU
dc.subjectMonocrystalsen_AU
dc.subjectPhotoluminescenceen_AU
dc.subjectZone meltingen_AU
dc.titleElectrical, optical and structural properties of lead iodideen_AU
dc.typeJournal Articleen_AU
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