Influence of annealing conditions on the growth and structure of embedded Pt nanocrystals

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dc.contributor.authorGiulian, Ren_AU
dc.contributor.authorAraujo, LLen_AU
dc.contributor.authorKluth, Pen_AU
dc.contributor.authorSprouster, DJen_AU
dc.contributor.authorSchnohr, CSen_AU
dc.contributor.authorJohannessen, Ben_AU
dc.contributor.authorForan, GJen_AU
dc.contributor.authorRidgway, MCen_AU
dc.date.accessioned2009-06-22T01:08:35Zen_AU
dc.date.accessioned2010-04-30T05:03:53Zen_AU
dc.date.available2009-06-22T01:08:35Zen_AU
dc.date.available2010-04-30T05:03:53Zen_AU
dc.date.issued2009-02-15en_AU
dc.date.statistics2009-02-15en_AU
dc.description.abstractThe growth and structure of Pt nanocrystals (NCs) formed by ion implantation in a-SiO2 has been investigated as a function of the annealing conditions. Transmission electron microscopy and small-angle x-ray scattering measurements demonstrate that the annealing ambient has a significant influence on NC size. Samples annealed in either Ar, O-2, or forming gas (95% N-2: 5% H-2) at temperatures ranging from 500 degrees C-1300 degrees C form spherical NCs with mean diameters ranging from 1-14 nm. For a given temperature, annealing in Ar yields the smallest NCs. O-2 and forming gas ambients produce NCs of comparable size though the latter induces H chemisorption at 1100 degrees C and above, as verified with x-ray absorption spectroscopy. This H intake is accompanied by a bond-length expansion and increased structural disorder in NCs of diameter >3 nm. © 2009, American Institute of Physicsen_AU
dc.identifier.citationGiulian, R., Araujo, L. L., Kluth, P., Sprouster, D. J., Schnohr, C. S., Johannessen, B., Foran, G. J. & Ridgway, M. C. (2009). Influence of annealing conditions on the growth and structure of embedded Pt nanocrystals. Journal of Applied Physics, 105(4), 8. doi:10.1063/1.3079506en_AU
dc.identifier.govdoc1253en_AU
dc.identifier.issn0021-8979en_AU
dc.identifier.issue4en_AU
dc.identifier.journaltitleJournal of Applied Physicsen_AU
dc.identifier.pagination8en_AU
dc.identifier.urihttp://dx.doi.org/10.1063/1.3079506en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/1451en_AU
dc.identifier.volume105en_AU
dc.language.isoenen_AU
dc.publisherAmerican Institute of Physicsen_AU
dc.subjectAnnealingen_AU
dc.subjectChemisorptionen_AU
dc.subjectPlatinumen_AU
dc.subjectSilicon compoundsen_AU
dc.subjectTransmission electron microscopyen_AU
dc.subjectSmall angle scatteringen_AU
dc.titleInfluence of annealing conditions on the growth and structure of embedded Pt nanocrystalsen_AU
dc.typeJournal Articleen_AU
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