Silicon detector dead layer thickness estimates using proton bremsstrahlung from low atomic number targets

Abstract

Proton-induced bremsstrahlung radiation in the 1-5 keV energy range has been used to estimate the silicon dead layer thickness in a Si(Li) detector. This novel technique does not require accurate bremsstrahlung cross sections with x-ray energy; it just assumes these cross sections and hence the efficiency corrected yield is both smooth and continuous across the Si K edge at 1.838 keV. © 2008, Wiley-Blackwell.