Influence of gas entry point on plasma chemistry, ion energy and deposited alumina thin films in filtered cathodic arc

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dc.contributor.authorRosen, Jen_AU
dc.contributor.authorPersson, POAen_AU
dc.contributor.authorIonescu, Men_AU
dc.contributor.authorPigott, Jen_AU
dc.contributor.authorMcKenzie, DRen_AU
dc.contributor.authorBilek, MMMen_AU
dc.date.accessioned2008-04-08T02:29:19Zen_AU
dc.date.accessioned2010-04-30T05:02:24Zen_AU
dc.date.available2008-04-08T02:29:19Zen_AU
dc.date.available2010-04-30T05:02:24Zen_AU
dc.date.issued2007-07-03en_AU
dc.date.statistics2007-10en_AU
dc.description.abstractThe effect of gas entry point on the plasma chemistry, ion energy distributions and resulting alumina thin film growth have been investigated for a d.c. cathodic arc with an aluminum cathode operated in an oxygen/argon atmosphere. Ions of aluminum, oxygen and argon, as well as ions originating from the residual gas are investigated, and measurements for gas entry at both the cathode and close to the substrate are compared. The latter was shown to result in higher ion flux, lower levels of ionised residual gas, and lower ion energies, as compared to gas inlet at the cathode. These plasma conditions that apply when gas entry at the substrate is used result in a higher film deposition rate, less residual gas incorporation, and more stoichiometric alumina films. The results show that the choice of gas entry point is a crucial parameter in thin film growth using reactive PVD processes such as reactive cathodic arc deposition. © 2007, Springer.en_AU
dc.identifier.citationRosen, J., Persson, P. O. A., Ionescu, M., Pigott, J., McKenzie, D. R., & Bilek, M. M. M. (2007). Influence of gas entry point on plasma chemistry, ion energy and deposited alumina thin films in filtered cathodic arc. Plasma Chemistry and Plasma Processing, 27(5), 599-608. doi:10.1007/s11090-007-9088-9en_AU
dc.identifier.govdoc1148en_AU
dc.identifier.issn0272-4324en_AU
dc.identifier.issue5en_AU
dc.identifier.journaltitlePlasma Chemistry and Plasma Processingen_AU
dc.identifier.pagination599-608en_AU
dc.identifier.urihttp://dx.doi.org/10.1007/s11090-007-9088-9en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/1049en_AU
dc.identifier.volume27en_AU
dc.language.isoenen_AU
dc.publisherSpringeren_AU
dc.subjectGasesen_AU
dc.subjectIonsen_AU
dc.subjectAluminatesen_AU
dc.subjectPlasmaen_AU
dc.subjectThin filmsen_AU
dc.titleInfluence of gas entry point on plasma chemistry, ion energy and deposited alumina thin films in filtered cathodic arcen_AU
dc.typeJournal Articleen_AU
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