Characterization of ion tracks in PMMA for single ion lithography

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dc.contributor.authorAlves, Aen_AU
dc.contributor.authorJohnston, PNen_AU
dc.contributor.authorReichart, Pen_AU
dc.contributor.authorJamieson, DNen_AU
dc.contributor.authorSiegele, Ren_AU
dc.date.accessioned2008-04-14T04:08:34Zen_AU
dc.date.accessioned2010-04-30T05:02:23Zen_AU
dc.date.available2008-04-14T04:08:34Zen_AU
dc.date.available2010-04-30T05:02:23Zen_AU
dc.date.issued2007-07en_AU
dc.date.statistics2007-07en_AU
dc.description.abstractThe ultimate resolution in ion beam lithography (IBL) can be achieved by etching tracks modified by the passage of a single ion impact which has a diameter in the order of 10 nm. For precise counting of single ions, a Si photodiode is used as a substrate onto which a PMMA film is spun. We have macroscopically investigated the sensitivity of PMMA using 3 MeV H end found that a deposited energy density of greater than 1 eV/nm(3) is required to remove the PMMA film for 60 s developing in a water:IPA 1:4 solution. From this sensitivity measurement we have determined that 8 MeV F, 71 MeV Cu and 88 MeV I ions should produce enough damage in a single ion strike to create a hole etched along the latent damage track. We have used AFM imaging to quantitatively characterise the hole diameter as a function of the incident ion and the developing time. It was found that for up to 8 min development in a water:IPA solution holes were created for the F, Cu and I ions. SEM imaging has also been used to verify the holes seen by AFM imaging. © 2007, Elsevier Ltd.en_AU
dc.identifier.citationAlves, A., Johnston, P. N., Reichart, P., Jamieson, D. N., & Siegele, R. (2007). Characterization of ion tracks in PMMA for single ion lithography. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 260(1), 431-436. doi:10.1016/j.nimb.2007.02.058en_AU
dc.identifier.govdoc1147en_AU
dc.identifier.issn0168-583Xen_AU
dc.identifier.issue1en_AU
dc.identifier.journaltitleNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atomsen_AU
dc.identifier.pagination431-436en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/j.nimb.2007.02.058en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/1067en_AU
dc.identifier.volume260en_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectIonsen_AU
dc.subjectPMMAen_AU
dc.subjectIon beamsen_AU
dc.subjectResolutionen_AU
dc.subjectEnergyen_AU
dc.subjectEtchingen_AU
dc.titleCharacterization of ion tracks in PMMA for single ion lithographyen_AU
dc.typeJournal Articleen_AU
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