Evaluation of silicon detectors with integrated JFET for biomedical applications

Simple item page
dc.contributor.authorSafavi-Naeini, Men_AU
dc.contributor.authorFranklin, DRen_AU
dc.contributor.authorLerch, MLFen_AU
dc.contributor.authorPetasecca, Men_AU
dc.contributor.authorPignatel, Gen_AU
dc.contributor.authorReinhard, MIen_AU
dc.contributor.authorDalla Betta, GFen_AU
dc.contributor.authorZorzi, Nen_AU
dc.contributor.authorRosenfeld, ABen_AU
dc.date.accessioned2010-04-07T06:43:36Zen_AU
dc.date.accessioned2010-04-30T05:09:22Zen_AU
dc.date.available2010-04-07T06:43:36Zen_AU
dc.date.available2010-04-30T05:09:22Zen_AU
dc.date.issued2009-06en_AU
dc.date.statistics2009-06en_AU
dc.description.abstractThis paper presents initial results from electrical, spectroscopic and ion beam induced charge (IBIC) characterisation of a novel silicon PIN detector, featuring an on-chip n -channel JFET and matched feedback capacitor integrated on its p-side (frontside). This structure reduces electronic noise by minimising stray capacitance and enables highly efficient optical coupling between the detector back-side and scintillator, providing a fill factor of close to 100%. The detector is specifically designed for use in high resolution gamma cameras, where a pixellated scintillator crystal is directly coupled to an array of silicon photodetectors. The on-chip JFET is matched with the photodiode capacitance and forms the input stage of an external charge sensitive preamplifier (CSA). The integrated monolithic feedback capacitor eliminates the need for an external feedback capacitor in the external electronic readout circuit, improving the system performance by eliminating uncontrolled parasitic capacitances. An optimised noise figure of 152 electrons RMS was obtained with a shaping time of 2 mus and a total detector capacitance of 2 pF. The energy resolution obtained at room temperature (2°C) at 27 keV (direct interaction of I-125 gamma rays) was 5.09%, measured at full width at half maximum (FWHM). The effectiveness of the guard ring in minimising the detector leakage current and its influence on the total charge collection volume is clearly demonstrated by the IBIC images. © 2009, Institute of Electrical and Electronics Engineers (IEEE)en_AU
dc.identifier.citationSafavi-Naeini, M., Franklin, D. R., Lerch, M. L. F., Petasecca, M., Pignatel, G. U., Reinhard, M., Dalla Betta, G. F., Zorzi, N., & Rosenfeld, A. B. (2009). Evaluation of silicon detectors with integrated JFET for biomedical applications. IEEE Transactions on Nuclear Science, 56(3), 1051-1055. doi:10.1109/TNS.2009.2013949en_AU
dc.identifier.govdoc1604en_AU
dc.identifier.issn0018-9499en_AU
dc.identifier.issue3en_AU
dc.identifier.journaltitleIEEE Transactions on Nuclear Scienceen_AU
dc.identifier.pagination1051-1055en_AU
dc.identifier.urihttp://dx.doi.org/10.1109/TNS.2009.2013949en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/3089en_AU
dc.identifier.volume56en_AU
dc.language.isoenen_AU
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_AU
dc.subjectSiliconen_AU
dc.subjectPhosphorsen_AU
dc.subjectCapacitorsen_AU
dc.subjectGamma camerasen_AU
dc.subjectPhotodetectorsen_AU
dc.subjectCharge statesen_AU
dc.titleEvaluation of silicon detectors with integrated JFET for biomedical applicationsen_AU
dc.typeJournal Articleen_AU
Files
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.79 KB
Format:
Plain Text
Description:
Download
Collections
Journal Articles