Monte Carlo analysis of a lateral IBIC experiment on a 4H-SiC Schottkey diode

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dc.contributor.authorOlivero, Pen_AU
dc.contributor.authorForneris, Jen_AU
dc.contributor.authorGamarra, Pen_AU
dc.contributor.authorJakšić, Men_AU
dc.contributor.authorLo Giudice, Aen_AU
dc.contributor.authorManfredotti, Cen_AU
dc.contributor.authorPastuovic, Zen_AU
dc.contributor.authorSkukan, Nen_AU
dc.contributor.authorVittone, Een_AU
dc.date.accessioned2012-04-23T04:34:19Zen_AU
dc.date.available2012-04-23T04:34:19Zen_AU
dc.date.issued2011-10-15en_AU
dc.date.statistics2012-04-23en_AU
dc.description.abstractThe transport properties of a 4H-SiC Schottky diode have been investigated by the ion beam induced charge (IBIC) technique in lateral geometry through the analysis of the charge collection efficiency (CCE) profile at a fixed applied reverse bias voltage. The cross section of the sample orthogonal to the electrodes was irradiated by a rarefied 4 MeV proton microbeam and the charge pulses have been recorded as function of incident proton position with a spatial resolution of 2 mu m. The CCE profile shows a broad plateau with CCE values close to 100% occurring at the depletion layer, whereas in the neutral region, the exponentially decreasing profile indicates the dominant role played by the diffusion transport mechanism. Mapping of charge pulses was accomplished by a novel computational approach, which consists in mapping the Gunn's weighting potential by solving the electrostatic problem by finite element method and hence evaluating the induced charge at the sensing electrode by a Monte Carlo method. The combination of these two computational methods enabled an exhaustive interpretation of the experimental profiles and allowed an accurate evaluation both of the electrical characteristics of the active region (e.g. electric field profiles) and of basic transport parameters (i.e. diffusion length and minority carrier lifetime). (C) 2011 Elsevier B.V. All rights reserved.en_AU
dc.identifier.citationOlivero, P., Forneris, J., Gamarra, P., Jakšić, M., Lo Giudice, A., Manfredotti, C., Pastuović, Ž., Skukan, N., & Vittone, E. (2011). Monte Carlo analysis of a lateral IBIC experiment on a 4H-SiC Schottky diode. Paper presented to the 12th International Conference on Nuclear Microprobe Technology and Applications, 26-30 July 2010, Germany. In Butz, T., Reinert, T., & Spemann, D. (Eds), In Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 269(20), 2350-2354. doi:10.1016/j.nimb.2011.02.020en_AU
dc.identifier.conferenceenddate30 July 2010en_AU
dc.identifier.conferencename12th International Conference on Nuclear Microprobe Technology and Applicationsen_AU
dc.identifier.conferenceplaceGermanyen_AU
dc.identifier.conferencestartdate26 July 2010en_AU
dc.identifier.editorsButz, T., Reinert, T., & Spemann, D.en_AU
dc.identifier.govdoc4065en_AU
dc.identifier.issn0168-583Xen_AU
dc.identifier.issue20en_AU
dc.identifier.journaltitleNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atomsen_AU
dc.identifier.pagination2350-2354en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/j.nimb.2011.02.020en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/4183en_AU
dc.identifier.volume269en_AU
dc.language.isoenen_AU
dc.publisherElsevier B.V.en_AU
dc.subjectMonte Carlo Methoden_AU
dc.subjectIon beamsen_AU
dc.subjectSchottky barrier diodesen_AU
dc.subjectElectrodesen_AU
dc.subjectRadiation detectorsen_AU
dc.subjectMicroscopyen_AU
dc.titleMonte Carlo analysis of a lateral IBIC experiment on a 4H-SiC Schottkey diodeen_AU
dc.typeConference Paperen_AU
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