Effect of crucible materials on impurities in LPE-GaAs

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dc.contributor.authorMo, Len_AU
dc.contributor.authorButcher, KSAen_AU
dc.contributor.authorAlexiev, Den_AU
dc.date.accessioned2010-08-23T05:44:58Zen_AU
dc.date.available2010-08-23T05:44:58Zen_AU
dc.date.issued1996-03-01en_AU
dc.date.statistics1996-03-01en_AU
dc.description.abstractLPE-GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentration ranging from 5 × 1014 to 8 × 1015 carriers per cm3. DLTS data has shown that all epitaxial layers have deep level traps. © 1996, Elsevier Ltd.en_AU
dc.identifier.citationMo, L., Butcher, K. S. A., & Alexiev, D. (1996). Effect of crucible materials on impurities in LPE-GaAs. Journal of Crystal Growth, 160(1-2), 7-12. doi:10.1016/0022-0248(95)00895-0en_AU
dc.identifier.govdoc2503en_AU
dc.identifier.issn0022-0248en_AU
dc.identifier.issue1-2en_AU
dc.identifier.journaltitleJournal of Crystal Growthen_AU
dc.identifier.pagination7-12en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/0022-0248(95)00895-0en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/2305en_AU
dc.identifier.volume160en_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectCruciblesen_AU
dc.subjectGallium arsenidesen_AU
dc.subjectCapacitanceen_AU
dc.subjectElectric potentialen_AU
dc.subjectDeep level transient spectroscopyen_AU
dc.subjectEpitaxyen_AU
dc.titleEffect of crucible materials on impurities in LPE-GaAsen_AU
dc.typeJournal Articleen_AU
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