The measurement of minority carrier diffusion lengths for high purity GaAs using an electron beam induced current technique

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dc.contributor.authorButcher, KSAen_AU
dc.contributor.authorAlexiev, Den_AU
dc.contributor.authorTansley, TLen_AU
dc.contributor.authorLeung, Sen_AU
dc.date.accessioned2007-11-22T04:20:55Zen_AU
dc.date.accessioned2010-04-30T04:30:20Zen_AU
dc.date.available2007-11-22T04:20:55Zen_AU
dc.date.available2010-04-30T04:30:20Zen_AU
dc.date.issued1990-07en_AU
dc.description.abstractMeasurements of minority carrier diffusion lengths for p-type and n-type GaAs were carried out using an electron beam induced current technique. The GaAs material was grown by liquid phase epitaxy at the Australian Nuclear Science and Technology Organisation. The diffusion lengths measured for the n-type materials show good agreement with past results for material of similar purity. For higher purity p-type and n-type samples diffusion lengths were observed which are larger than any previously reported. For different electron beam voltages the observed values of diffusion length were unaffected by surface recombination. This again indicates very pure material. The diffusion length measurements reported here indicate that the LPE GaAs samples being produced by the Australian Nuclear Science and Technology Organisation's Radiation Detectors Project are of the highest quality for producing X-rays and low energy gamma ray radiation detectors.en_AU
dc.identifier.citationTansley, T., Leung, S., & Alexiev, D. (1990). The measurement of minority carrier diffusion lengths for high purity GaAs using an electron beam induced current technique (ANSTO/E693). Lucas Heights, N.S.W.: Australian Nuclear Science and Technology Organisation.en_AU
dc.identifier.govdoc214en_AU
dc.identifier.isbn642599068en_AU
dc.identifier.issn10307745en_AU
dc.identifier.otherANSTO-E-693en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/387en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Nuclear Science and Technology Organisationen_AU
dc.subjectANSTOen_AU
dc.subjectAustraliaen_AU
dc.subjectElectron beamsen_AU
dc.subjectN-type conductorsen_AU
dc.subjectRadiation detectorsen_AU
dc.subjectDiffusion lengthen_AU
dc.titleThe measurement of minority carrier diffusion lengths for high purity GaAs using an electron beam induced current techniqueen_AU
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