A method for annealing ion-implanted silicon on a vitreous carbon strip heater

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dc.contributor.authorLawson, EMen_AU
dc.date.accessioned2007-11-22T04:27:58Zen_AU
dc.date.accessioned2010-04-30T04:38:47Zen_AU
dc.date.available2007-11-22T04:27:58Zen_AU
dc.date.available2010-04-30T04:38:47Zen_AU
dc.date.issued1983-06en_AU
dc.description.abstractA description is given of a simple method for the transient annealing of ion-implanted semiconductors on a vitreous carbon strip heater. Samples of Si implanted with doses of 1-5 x 1015 cm-2 As and Sb ions at 35 or 80 KeV were annealed at temperatures in the range 650-1110oC and for times between 15 s and 2 min. Annealing was confirmed by Rutherford backscattering and electrical measurements. The details of these measurements are explained by taking into account the impurity solid solubility and the maximum as-implanted concentration. Supersaturated solutions of Sb and Si were found in all samples examined in this work. The production of supersaturation by strip heater annealing does not seem to have been reported elsewhere.en_AU
dc.identifier.citationLawson, E. M., (1983). A method for annealing ion-implanted silicon on a vitreous carbon strip heater. (AAEC/E570. Lucas Heights, NSW: Australian Atomic Energy Commission.en_AU
dc.identifier.govdoc700en_AU
dc.identifier.isbn064259774Xen_AU
dc.identifier.otherAAEC-E-570en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/690en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Atomic Energy Commissionen_AU
dc.subjectAnnealingen_AU
dc.subjectSiliconen_AU
dc.subjectCarbonen_AU
dc.subjectSolid solutionsen_AU
dc.subjectHeatersen_AU
dc.titleA method for annealing ion-implanted silicon on a vitreous carbon strip heateren_AU
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