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Cooled preamplifiers with N- or P-silicon JFET's

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dc.contributor.authorRyan, RDen_AU
dc.date.accessioned2007-11-22T04:33:23Zen_AU
dc.date.accessioned2010-04-30T04:41:25Zen_AU
dc.date.available2007-11-22T04:33:23Zen_AU
dc.date.available2010-04-30T04:41:25Zen_AU
dc.date.issued1970-09en_AU
dc.description.abstractA voltage sensitive cooled preamplifier has been operated with comparable resolution from n- and p-Si junction field effect transistor's (JFET's). To obtain optimum JFET operating conditions it is necessary to consider in detail the inter-related parameters of device thermal resistance, the variation of JFET noise with temperature and of gate current with drain voltage. Measurement and optimisation procedures are described.en_AU
dc.identifier.citationRyan, R. D. (1970). Cooled preamplifiers with N- or P-silicon JFET's. (AAEC/TM563). Lucas Heights, NSW:Australian Atomic Energy Commissionen_AU
dc.identifier.govdoc861en_AU
dc.identifier.isbn0642993777en_AU
dc.identifier.otherAAEC-TM-563en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/851en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Atomic Energy Commissionen_AU
dc.subjectPreamplifiersen_AU
dc.subjectSiliconen_AU
dc.subjectTransistorsen_AU
dc.subjectElectric potentialen_AU
dc.titleCooled preamplifiers with N- or P-silicon JFET'sen_AU

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