Transient conductance spectroscopy measurements of defect states in y-irradiated n-channel silicon field effect transistors with possible y-dosemeter applications

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dc.contributor.authorPearton, SJen_AU
dc.contributor.authorTavendale, AJen_AU
dc.contributor.authorWilliams, AAen_AU
dc.date.accessioned2007-11-22T04:18:58Zen_AU
dc.date.accessioned2010-04-30T04:33:25Zen_AU
dc.date.available2007-11-22T04:18:58Zen_AU
dc.date.available2010-04-30T04:33:25Zen_AU
dc.date.issued1980-12en_AU
dc.description.abstractA deep level transient capacitance spectroscopy (DLTS) system modified for the measurement of transient conductance has been used to observe gamma-ray induced defect centres in the gate junction of 2N4416 Si field effect transistors. The defect concentrations increased linearly wth gamma-dose in the range 50 kGy to 10 x 10 3 kGy (5-1000 Mrad) for the common E(c) - 0.17 eV level and in the range 500 kGy to 10 x 10 3 kGy (50- 1000 Mrad) for the levels E(c) - 0.22 eV and E(c) - 0.44 eV. Another common level a hole trap at E(v) + 0.42 eV was the only minority trap observed. The technique may be useful for measuring gamma-fluxes in situations inaccessible to standard dosemeters (e.g. flux-mapping).en_AU
dc.identifier.citationPearton, S. J., Tavendale, A. J., & Williams, A. A. (1980). Transient conductance spectroscopy measurements of defect states in y-irradiated n-channel silicon field effect transistors with possible y-dosemeter applications. (ANSTO/E-504). Lucas Heights, NSW: Australian Atomic Energy Commission, Research Establishment.en_AU
dc.identifier.govdoc392en_AU
dc.identifier.isbn0642597030en_AU
dc.identifier.otherAAEC-E-504en_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/309en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Atomic Energy Commissionen_AU
dc.subjectEmission spectroscopyen_AU
dc.subjectRadiation effectsen_AU
dc.subjectGamma radiationen_AU
dc.subjectSiliconen_AU
dc.subjectField effect transistorsen_AU
dc.titleTransient conductance spectroscopy measurements of defect states in y-irradiated n-channel silicon field effect transistors with possible y-dosemeter applicationsen_AU
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