Neutron transmutation doping of gallium arsenide.

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dc.contributor.authorAlexiev, Den_AU
dc.date.accessioned2007-11-22T04:14:05Zen_AU
dc.date.accessioned2010-04-30T04:32:04Zen_AU
dc.date.available2007-11-22T04:14:05Zen_AU
dc.date.available2010-04-30T04:32:04Zen_AU
dc.date.issued1987-12en_AU
dc.description.abstractNeutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms.cm3 per n.cm2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated.en_AU
dc.identifier.citationAlexiev, D. (1987). Neutron transmutation doping of gallium arsenide (ANSTO/E670). Lucas Heights, N.S.W.: Research Establishment, Australian Atomic Energy Commission.en_AU
dc.identifier.govdoc322en_AU
dc.identifier.isbn0642598770en_AU
dc.identifier.isbn0642598770en_AU
dc.identifier.issn10307745en_AU
dc.identifier.otherANSTO-E-670en_AU
dc.identifier.placeofpublicationLucas Heights, New South Walesen_AU
dc.identifier.urihttp://apo.ansto.gov.au/dspace/handle/10238/173en_AU
dc.language.isoen_auen_AU
dc.publisherAustralian Nuclear Science and Technology Organisationen_AU
dc.subjectGallium arsenidesen_AU
dc.subjectRadiation fluxen_AU
dc.subjectTransmutationen_AU
dc.subjectNeutronsen_AU
dc.titleNeutron transmutation doping of gallium arsenide.en_AU
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