Guest removal and external pressure variation induce spin crossover in halogen-functionalized 2-D Hofmann frameworks

The effect of halogen functionalization on the spin crossover (SCO) properties of a family of 2-D Hofmann framework materials, [Fe(II)Pd(CN)4(thioX)2]·2H2O (X = Cl and Br; thioCl = (E)-1-(5-chlorothiophen-2-yl)-N-(4H-1,2,4-triazol-4-yl)methanimine) and thioBr = (E)-1-(5-bromothiophen-2-yl)-N-(4H-1,2,4-triazol-4-yl)methanimine)), is reported. Inclusion of both the chloro- and bromo-functionalized ligands into the Hofmann-type frameworks (1Cl·2H2O and 2Br·2H2O) results in a blocking of spin-state transitions due to internal chemical pressure effects derived by the collective steric bulk of the halogen atoms and guest molecules. Cooperative one-step SCO transitions are revealed by either guest removal or the application of external physical pressure. Notably, removal of solvent water reveals a robust framework scaffold with only marginal variation between the solvated and desolvated structures (as investigated by powder and single crystal X-ray diffraction). Yet, one-step complete SCO transitions are revealed in 1Cl and 2Br with a transition temperature shift between the analogues due to various steric, structural, and electronic considerations. SCO can also be induced in the solvated species, 1Cl·2H2O and 2Br·2H2O, with the application of physical pressure, revealing a complete one-step SCO transition above 0.62 GPa (as investigated by magnetic susceptibility and single crystal X-ray diffraction measurements). © 2020 American Chemical Society

Keywords

Monocrystals, Ligands, Layers, Crystal structure, Solvents, Spin, X-ray diffraction, Pressure dependence, Magnetic susceptibility

Citation

Brennan, A. T., Zenere, K. A., Brand, H. E. A., Price, J. R., Bhadbhade, M. M., Turner, G. F., Moggach, S. A., Valverde-Muñoz, F. J., Real, J. A., Clegg, J. K., Kepert, C. J. & Neville, S. M. (2020). Guest removal and external pressure variation induce spin crossover in halogen-functionalized 2-D Hofmann frameworks. Inorganic Chemistry, 59(19), 14296-14305. doi:10.1021/acs.inorgchem.0c02092