Preferential amorphisation of Ge nanocrystals in a silica matrix

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dc.contributor.authorRidgway, MCen_AU
dc.contributor.authorAzevedo, GDMen_AU
dc.contributor.authorElliman, RGen_AU
dc.contributor.authorWesch, Wen_AU
dc.contributor.authorGlover, CJen_AU
dc.contributor.authorMiller, Ren_AU
dc.contributor.authorLlewellyn, DJen_AU
dc.contributor.authorForan, GJen_AU
dc.contributor.authorHansen, JLen_AU
dc.contributor.authorNylandsted Larsen, Aen_AU
dc.date.accessioned2021-09-09T01:14:51Zen_AU
dc.date.available2021-09-09T01:14:51Zen_AU
dc.date.issued2005-01-31en_AU
dc.date.statistics2021-08-24en_AU
dc.description.abstractRelative to bulk crystalline material, Ge nanocrystals in a silica matrix exhibit subtle structural perturbations including a non-Gaussian inter-atomic distance distribution. We now demonstrate such nanocrystals are extremely sensitive to ion irradiation. Using transmission electron microscopy, Raman spectroscopy and extended x-ray absorption fine structure spectroscopy, the crystalline-to-amorphous phase transformation in -8 nm diameter nanocrystals and bulk crystalline material has been compared. Amorphisation of Ge nanocrytals in a silica matrix was achieved at an ion dose -100 times less than that required for bulk crystalline standards. This rapid amorphisation of Ge nanocrystals is attributed to the preferential nucleation of the amorphous phase at the nanocrystal/matrix interface, the pre-irradiation, higher-energy structural state of the nanocrystals themselves and an enhanced nanocrystal vacancy concentration due to the more effective trapping of irradiation-induced interstitials at the nanocrystal/matrix interface and inhibited Frenkel pair recombination when Ge interstitials are recoiled into the matrix. To demonstrate the significance of the latter, we show ion irradiation of -2 nm diameter nanocrystals yields their dissolution when the range of recoiled Ge atoms exceeds the nanocrystal bounds.en_AU
dc.identifier.citationRidgway, M. C., Azevedo, G. M., Elliman, R. G., Wesch, W., Glover, C. J., Miller, R., Llewellyn, D. J., Foran, D. J., Hansen, J. L. & Nylandsted Larsen, A. (2005). Preferential amorphisation of Ge nanocrystals in a silica matrix. Paper presented to the 29th Condensed Matter and Materials Meeting, "Australian Institute of Physics Sixteenth Biennial Congress", Canberra, 2005, 31 January - 4 February 2005, 149-150.en_AU
dc.identifier.conferenceenddate4 February 2005en_AU
dc.identifier.conferencename29th Condensed Matter and Materials Meeting, 'Australian Institute of Physics Sixteenth Biennial Congress'en_AU
dc.identifier.conferenceplaceCanberra, Australiaen_AU
dc.identifier.conferencestartdate31 January 2005en_AU
dc.identifier.isbn0-9598064-8-2en_AU
dc.identifier.issnARP PMO 65en_AU
dc.identifier.urihttps://apo.ansto.gov.au/dspace/handle/10238/11657en_AU
dc.language.isoenen_AU
dc.publisherAustralian Institute of Physicsen_AU
dc.subjectCharged particlesen_AU
dc.subjectCrystal defectsen_AU
dc.subjectCrystal structureen_AU
dc.subjectElectron microscopyen_AU
dc.subjectElementsen_AU
dc.subjectLaser spectroscopyen_AU
dc.subjectMetalsen_AU
dc.subjectMicroscopyen_AU
dc.subjectMineralsen_AU
dc.subjectOxide mineralsen_AU
dc.subjectPoint defectsen_AU
dc.subjectSpectroscopyen_AU
dc.titlePreferential amorphisation of Ge nanocrystals in a silica matrixen_AU
dc.typeConference Abstracten_AU
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