Charge collection in SOI microdosimeters and their radiation hardness

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dc.contributor.authorPan, VAen_AU
dc.contributor.authorTran, LTen_AU
dc.contributor.authorPastuovic, Zen_AU
dc.contributor.authorHill, Den_AU
dc.contributor.authorWilliams, JBen_AU
dc.contributor.authorKok, Aen_AU
dc.contributor.authorPovoli, Men_AU
dc.contributor.authorPogossov, Aen_AU
dc.contributor.authorPeracchi, Sen_AU
dc.contributor.authorBoardman, DAen_AU
dc.contributor.authorDavis, Jen_AU
dc.contributor.authorGuatelli, Sen_AU
dc.contributor.authorPetasecca, Men_AU
dc.contributor.authorLerch, MLFen_AU
dc.contributor.authorRosenfeld, ABen_AU
dc.date.accessioned2023-09-07T00:58:05Zen_AU
dc.date.available2023-09-07T00:58:05Zen_AU
dc.date.issued2023-02-03en_AU
dc.date.statistics2023-04-13en_AU
dc.description.abstractA new batch of microdosimeters has been extensively studied for their charge collection efficiency (CCE) properties, as well as their radiation hardness for medical, space and accident applications. Silicon-on-insulator (SOI) microdosimeters with an active layer thickness of 10, 20 and 50 μm have been investigated and were characterized with a 24 MeV carbon ion beam as well as a Co-60 gamma source. A negative pulse was observed in addition to the positive pulses generated within the sensitive volumes (SVs) by incident ions which led to undesirable low energy events in the SOI microdosimeters response. To study this phenomenon, the microdosimeters were irradiated with gamma radiation from a Co-60 source with a total dose of 3 and 10 Mrad(Si). It was determined that the negative pulse was originating from the support wafer due to the displacement current phenomenon. Irradiation with the Co-60 source led to a disappearing of the negative pulse due to an increase in recombination within the support wafer while almost no changes in CCE were observed. A radiation hardness study was also performed on the 50 μm SOI microdosimeter with 16 SVs being irradiated with a fluence of ~ 10 8 12 C ions/cm 2 . A CCE deficit of approximately 2% was observed at an operation bias of 10V within the SVs. The findings of this work demonstrate that the SOI microdosimeters can be utilized in space and medical applications as they can handle typical levels of dose encountered in these applications. Additionally, evidence for SOI microdosimeter fabrication standards in terms of support wafer resistivity and buried oxide (BOX) thickness is shown. © 2023 IEEEen_AU
dc.identifier.citationPan, V. A., Tran, L. T., Pastuovic, Z., Hill, D., Williams, J., Kok, A., Povoli, M., Pogossov, A., Peracchi, S., Boardman, D., Davis, J., Guatelli, S., Petasecca, M., Lerch, M. L. F., & Rosenfeld, A. B. (2023). Charge collection in SOI microdosimeters and their radiation hardness. IEEE Transactions on Nuclear Science. 70(4). 568-574. doi:10.1109/TNS.2023.3242267en_AU
dc.identifier.issn1558-1578en_AU
dc.identifier.issue4en_AU
dc.identifier.journaltitleIEEE Transactions on Nuclear Scienceen_AU
dc.identifier.pagination568-574en_AU
dc.identifier.urihttps//doi.org/10.1109/TNS.2023.3242267en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15100en_AU
dc.identifier.volume70en_AU
dc.language.isoenen_AU
dc.publisherIEEEen_AU
dc.relation.urihttps//doi.org/10.1109/TNS.2023.3242267en_AU
dc.subjectIonsen_AU
dc.subjectProbesen_AU
dc.subjectRadiation effectsen_AU
dc.subjectCarbonen_AU
dc.subjectSiliconen_AU
dc.subjectNeutronsen_AU
dc.subjectRadiation hardnessen_AU
dc.subjectMicrodosimetryen_AU
dc.titleCharge collection in SOI microdosimeters and their radiation hardnessen_AU
dc.typeJournal Articleen_AU
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