Electrical conductivity and defect disorder of tantalum‐doped TiO2

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dc.contributor.authorAlim, MAen_AU
dc.contributor.authorBak, Ten_AU
dc.contributor.authorAtanacio, AJen_AU
dc.contributor.authorDu Plessis, Jen_AU
dc.contributor.authorZhou, MFen_AU
dc.contributor.authorDavis, Jen_AU
dc.contributor.authorNowotny, Jen_AU
dc.date.accessioned2020-10-13T19:21:15Zen_AU
dc.date.available2020-10-13T19:21:15Zen_AU
dc.date.issued2017-05-02en_AU
dc.date.statistics2020-10-07en_AU
dc.description.abstractThe present work reports the electrical properties of polycrystalline Ta‐doped TiO2 (0.39 at.% Ta) determined in situ at elevated temperatures (1173‐1323 K) in the gas phase of controlled oxygen activity (10−12 Pa to 105 Pa). The effect of oxygen activity on the electrical conductivity and thermoelectric power of TiO2 is discussed in terms of defect disorder, including (1) the intrinsic electronic disorder that is governed by electronic compensation in the strongly reducing regime, (2) the extrinsic electronic disorder that is governed by electronic charge compensation in the reducing regime, and (3) the extrinsic ionic disorder that is governed by ionic compensation in the oxidizing regime. It is shown that tantalum ions are incorporated into the titanium sublattice of TiO2 leading to the formation of donor‐type energy levels. The Arrhenius‐type plot of the electrical conductivity data leads to the determination of the formation enthalpy terms. The obtained results are considered in terms of the effect of tantalum and oxygen activity on the defect disorder and the associated key performance‐related properties in the light‐induced partial water oxidation. © 2017 The American Ceramic Societyen_AU
dc.identifier.citationAlim, M. A., Bak, T., Atanacio, A., Du Plessis, J., Zhou, M., Davis, J., & Nowotny, J. (2017). Electrical conductivity and defect disorder of tantalum‐doped TiO2. Journal of the American Ceramic Society, 100(9), 4088-4100. doi:10.1111/jace.14959en_AU
dc.identifier.issn1551-2916en_AU
dc.identifier.issue9en_AU
dc.identifier.journaltitleJournal of the American Ceramic Societyen_AU
dc.identifier.pagination4088-4100en_AU
dc.identifier.urihttps://doi.org/10.1111/jace.14959en_AU
dc.identifier.urihttps://apo.ansto.gov.au/dspace/handle/10238/9897en_AU
dc.identifier.volume100en_AU
dc.language.isoenen_AU
dc.publisherJohn Wiley & Sonsen_AU
dc.subjectElectrical propertiesen_AU
dc.subjectOxidesen_AU
dc.subjectPoint defectsen_AU
dc.subjectDefectsen_AU
dc.subjectElectric conductivityen_AU
dc.subjectOxygenen_AU
dc.subjectTantalumen_AU
dc.subjectTitaniumen_AU
dc.subjectTitanium oxidesen_AU
dc.titleElectrical conductivity and defect disorder of tantalum‐doped TiO2en_AU
dc.typeJournal Articleen_AU
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