Magnetotransport and Berry phase tuning in Gd-doped Bi2Se3 topological insulator single crystals

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dc.contributor.authorChen, Len_AU
dc.contributor.authorLi, SSen_AU
dc.contributor.authorZhao, Wen_AU
dc.contributor.authorBake, Aen_AU
dc.contributor.authorCortie, DLen_AU
dc.contributor.authorWang, XLen_AU
dc.contributor.authorKarel, Jen_AU
dc.contributor.authorLi, Hen_AU
dc.contributor.authorZheng, RKen_AU
dc.date.accessioned2024-02-27T03:22:26Zen_AU
dc.date.available2024-02-27T03:22:26Zen_AU
dc.date.issued2022-05-01en_AU
dc.date.statistics2024-02-27en_AU
dc.description.abstractThe Berry phase is an important concept in solids, correlated to the band topology, axion electrodynamics, and potential applications of topological materials. Here, we investigate the magnetotransport and Berry phase of rare earth element Gd-doped Bi2Se3 (Gd:Bi2Se3) topological insulators (TIs) at low temperatures and high magnetic fields. Gd:Bi2Se3 single crystals show Shubnikov-de Haas (SdH) oscillations with nontrivial Berry phase, while Bi2Se3 single crystals show zero Berry phase in SdH oscillations. A fitting of the temperature-dependent magnetization curves using the Curie-Weiss law reveals that the Gd dopants in the crystals show paramagnetism in the 3-300 K region, indicating that the origin of the Berry phase is not long-range magnetic ordering. Moreover, Gd doping has limited influence on the quantum oscillation parameters (e.g., frequency of oscillation, area of Fermi surface, effective electron mass, and Fermi wave vectors) but has a significant impact on the Hall mobility, carrier density, and band topology. Our results demonstrate that Gd doping can tune the Berry phase of TIs effectively, which may pave the way for the future realization of many predicted exotic transport phenomena of topological origin. ©2022 American Physical Societyen_AU
dc.description.sponsorshipThis paper is supported by the National Natural Science Foundation of China (Grant No. 11974155). W.Z., A.B., D.C., X.W., and J.K. acknowledge the support from ARC Centre of Excellence in Future Low-Energy Electronics Technologies No. CE170100039. J.K. and W.Z. acknowledge Australian Research Council Discovery Project No. DP200102477.en_AU
dc.identifier.articlenumber054202en_AU
dc.identifier.citationChen, L., Li, S.-S., Zhao, W., Bake, A., Cortie, D., Wang, X., Karel, J., Li, H., & Zheng, R.-K. (2022). Magnetotransport and Berry phase tuning in Gd-doped Bi2Se3 topological insulator single crystals. Physical Review Materials, 6(5), 054202. doi:10.1103/PhysRevMaterials.6.054202en_AU
dc.identifier.issn2476-0455en_AU
dc.identifier.issn2475-9953en_AU
dc.identifier.issue5en_AU
dc.identifier.journaltitlePhysical Review Materialsen_AU
dc.identifier.urihttp://dx.doi.org/10.1103/physrevmaterials.6.054202en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15450en_AU
dc.identifier.volume6en_AU
dc.languageEnglishen_AU
dc.language.isoenen_AU
dc.publisherAmerican Physical Societyen_AU
dc.subjectDoped materialsen_AU
dc.subjectCrystalsen_AU
dc.subjectAxionsen_AU
dc.subjectRare earthsen_AU
dc.subjectCurie-Weiss Lawen_AU
dc.subjectOscillationsen_AU
dc.subjectHall effecten_AU
dc.titleMagnetotransport and Berry phase tuning in Gd-doped Bi2Se3 topological insulator single crystalsen_AU
dc.typeJournal Articleen_AU
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