Depth-profiling of surface composition in air-oxidised Ti{sub 3}SiC{sub 2}

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dc.contributor.authorLow, IMen_AU
dc.contributor.authorWren, Een_AU
dc.contributor.authorOo, Zen_AU
dc.contributor.authorPrince, KEen_AU
dc.contributor.authorAtanacio, AJen_AU
dc.date.accessioned2021-02-03T22:47:01Zen_AU
dc.date.available2021-02-03T22:47:01Zen_AU
dc.date.issued2005-11-20en_AU
dc.date.statistics2020-01-25en_AU
dc.description.abstractTitanium silicon carbide (Ti3SiC2) is a remarkable ternary compound that defies many of the expected properties of a ceramic. It has better thermal and electrical conductivity than titanium metal, is resistant to thermal shock, and is relatively light. Its hardness is exceptionally low for a carbide, and like graphite, it is readily machinable. Hitherto, mixed and confusing results have been reported for the oxidation resistance and behaviour of Ti3SiC2 in air. For instance, the oxidation resistance of Ti3SiC2 was reported to be excellent at temperatures below 1100 degrees C due to the formation of a protective SiO2 surface layer. However, oxidation of Ti3SiC2 was detected to commence as low as 400 degrees C through the formation of an anatase-like TiO2 film that eventually transformed to rutile at 1050 degrees C. In addition, although the existence of the protective TiO2 (rutile) has been confirmed by all the researchers, the presence of the protective SiO2 film is much more elusive. In a recent study, the oxidized layers were reported to exhibit a duplex microstructure in the temperature range 1000-1500 degrees C with an outer layer of TiO2 (rutile) and an inner layer consisting of SiO2 and TiO2. In a similar study, researchers also found the protective oxide scales that formed to be layered with the inner layer composed of silica (∼1200 degrees C) and titania and the outer layer comprised of pure rutile (∼900 degrees C). The growth of these oxide layers is both temperature and time-dependent and was thought to occur by the outward diffusion of titanium and carbon and the inward diffusion of oxygen through surface pores or cracks. However, the nature and precise composition of the oxide layers formed during oxidation remain controversial, especially in relation to the presence of SiO2 and the graded nature of the oxides formed. In this paper, the surface composition depth-profiles of air-oxidized Ti3SiC2 have been investigated by secondary ion mass spectroscopy (SIMS) in the temperature range 500-1400 degrees C. Line scan and near-surface depth profiling by SIMS have revealed a distinct gradation in phase composition within the surface oxide layers.en_AU
dc.identifier.citationLow, I. M., Wren, E., Oo, Z., Prince, K. E., & Atanacio, A. (2005). Depth-profiling of surface composition in air-oxidised Ti {sub 3} SiC {sub 2}. In Bruhn, F. (chair), 14th Australian Conference on Nuclear and Complementary Techniques of Analysis & 8th Vacuum Society of Australia Congress, 20-22 November 2005, Wellington (New Zealand), (pp. 93-96).en_AU
dc.identifier.conferenceenddate22 November 2005en_AU
dc.identifier.conferencename14th Australian Conference on Nuclear and Complementary Techniques of Analysis & 8th Vacuum Society of Australia Congressen_AU
dc.identifier.conferenceplaceWellington, New Zealanden_AU
dc.identifier.conferencestartdate20 November 2005en_AU
dc.identifier.editionBruhn, Fen_AU
dc.identifier.isbn0-9758434-0-0en_AU
dc.identifier.pagination93-96en_AU
dc.identifier.urihttps://apo.ansto.gov.au/dspace/handle/10238/10293en_AU
dc.language.isoenen_AU
dc.publisherAustralian Institute of Nuclear Science and Engineering (AINSE)en_AU
dc.subjectCarbon 12en_AU
dc.subjectMass spectroscopyen_AU
dc.subjectOxidationen_AU
dc.subjectOxygen 16en_AU
dc.subjectRutileen_AU
dc.subjectTitanium 48en_AU
dc.subjectTitanium carbidesen_AU
dc.subjectSilicon 28en_AU
dc.subjectSilicon carbidesen_AU
dc.subjectSurface propertiesen_AU
dc.titleDepth-profiling of surface composition in air-oxidised Ti{sub 3}SiC{sub 2}en_AU
dc.typeConference Paperen_AU
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