Atomic-scale structure of In1-xGaxSb thin films as-deposited and after ion irradiation

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dc.contributor.authorBolzan, CAen_AU
dc.contributor.authorJohannessen, Ben_AU
dc.contributor.authorWu, ZBen_AU
dc.contributor.authorGiulian, Ren_AU
dc.date.accessioned2025-12-05T03:20:37Zen_AU
dc.date.available2025-12-05T03:20:37Zen_AU
dc.date.issued2024-04-08en_AU
dc.date.statistics2025-11-05en_AU
dc.description.abstractExtended x-ray absorption fine structure spectroscopy was used to investigate the neighborhood of In and Ga atoms in In1-xGaxSb thin films, deposited by magnetron sputtering and, subsequently, irradiated with 8 MeV Au+3 ions, with ion fluences ranging from 1 × 1013 cm−2 to 5 × 1014 cm−2. For as-deposited films, it was verified that the lattice mismatch in In1-xGaxSb is accommodated favorably through bond bending over bond stretching. This accommodation was modelled for all possible first nearest neighbor configurations based on experimentally determined structural parameters. Based on this, it was obtained that structural and electronic effects both contribute to the bandgap change in a similar way and neither local atomic arrangements nor charge redistribution can be neglected. Upon ion irradiation, this compound preserves its constant bond length value for the range of ion fluences used in this work. © 2024 Elsevier Ltd.en_AU
dc.identifier.articlenumber111750en_AU
dc.identifier.citationBolzan, C. A., Johannessen, B., Wu, Z., & Giulian, R. (2024). Atomic-scale structure of In1-xGaxSb thin films as-deposited and after ion irradiation. Radiation Physics and Chemistry, 221, 111750. doi:10.1016/j.radphyschem.2024.111750en_AU
dc.identifier.issn0969-806Xen_AU
dc.identifier.journaltitleRadiation Physics and Chemistryen_AU
dc.identifier.urihttps://doi.org/10.1016/j.radphyschem.2024.111750en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/16765en_AU
dc.identifier.volume221en_AU
dc.languageEnglishen_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectGalliumen_AU
dc.subjectAntimonyen_AU
dc.subjectThin Filmsen_AU
dc.subjectIrradiationen_AU
dc.subjectAbsorptionen_AU
dc.subjectSpectroscopyen_AU
dc.subjectMagnetronsen_AU
dc.subjectElectronic structureen_AU
dc.subjectIrradiationen_AU
dc.subjectMeV Rangeen_AU
dc.subjectSemiconductor devicesen_AU
dc.subjectOptoelectronic devicesen_AU
dc.subjectThermophotovoltaic Convertersen_AU
dc.titleAtomic-scale structure of In1-xGaxSb thin films as-deposited and after ion irradiationen_AU
dc.typeJournal Articleen_AU
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