Quasi free-standing graphene growth on FIB-Patterned 3C-SiC nanostructures

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dc.contributor.authorAmjadipour, Men_AU
dc.contributor.authorTadich, Aen_AU
dc.contributor.authorMacLeod, Jen_AU
dc.contributor.authorLipton-Duffin, Jen_AU
dc.contributor.authorIacopi, Fen_AU
dc.contributor.authorMotta, Nen_AU
dc.date.accessioned2022-08-30T01:38:45Zen_AU
dc.date.available2022-08-30T01:38:45Zen_AU
dc.date.issued2018-01-30en_AU
dc.date.statistics2021-10-12en_AU
dc.description.abstractThere is a growing body of literature that recognizes the potential of graphene for use in electronics. However, graphene’s lack of bandgap challenges its remarkable range of applications. Theoretical work suggests that a bandgap might be opened in graphene through quantum confinement, for example in graphene nanoribbons. Thermal decomposition of SiC has proven to be an excellent method to grow transfer-free wafer-scale graphene. Growing graphene on SiC thin films on Si is a cheaper alternative to the growth on bulk SiC. In this research we attempt to manipulate the SiC substrate dimension to grow graphene over nanostructures and use hydrogen intercalation to produce quasi free-standing graphene. SiC mesas have been fabricated by patterning SiC/Si substrates using Focused Ion Beam (FIB) milling. Hydrogen intercalation procedure has been employed at 600 °C to fabricate free-standing graphene on the structures. Synchrotron radiation near-edge X-ray absorption fine structure (NEXAFS) with core-level photoelectron spectroscopy (PES), scanning tunnelling microscopy (STM), scanning electron microscopy (SEM), and Raman spectroscopy were used to investigate the process. Our result indicates the possibility of growing free-standing epitaxy graphene over SiC nanostructures. However, more research is needed to better understand the impact of patterning procedure on the graphene growth and decrease the damage caused by milling process.en_AU
dc.identifier.citationAmjadipour, M., Tadich, A., MacLeod, J., Lipton-Duffin, J., Iacopi, F., & Motta, N. (2018). Quasi free-standing graphene growth on FIB-Patterned 3C-SiC nanostructures. Poster presented to the 42nd Annual Condensed Matter and Materials Meeting Charles Sturt University, Wagga Wagga, NSW 30th January – 2nd February, 2018. (pp. 91). Retrieved from: https://physics.org.au/wp-content/uploads/cmm/2018/Wagga_2018_Conference_Handbook.pdfen_AU
dc.identifier.conferenceenddate2 February 2018en_AU
dc.identifier.conferencename42nd Annual Condensed Matter and Materials Meetingen_AU
dc.identifier.conferenceplaceWagga Wagga, NSWen_AU
dc.identifier.conferencestartdate30 January 2018en_AU
dc.identifier.pagination91en_AU
dc.identifier.urihttps://physics.org.au/wp-content/uploads/cmm/2018/Wagga_2018_Conference_Handbook.pdfen_AU
dc.identifier.urihttps://apo.ansto.gov.au/dspace/handle/10238/13669en_AU
dc.language.isoenen_AU
dc.publisherAustralian Institute of Physicsen_AU
dc.subjectBeamsen_AU
dc.subjectCarbidesen_AU
dc.subjectCarbonen_AU
dc.subjectCarbon compoundsen_AU
dc.subjectElectron spectroscopyen_AU
dc.subjectElementsen_AU
dc.subjectLaser spectroscopyen_AU
dc.subjectMachiningen_AU
dc.subjectMicroscopyen_AU
dc.subjectNonmetalsen_AU
dc.subjectRadiation sourcesen_AU
dc.subjectSilicon compoundsen_AU
dc.subjectSpectroscopyen_AU
dc.titleQuasi free-standing graphene growth on FIB-Patterned 3C-SiC nanostructuresen_AU
dc.typeConference Posteren_AU
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