SIMS investigation of oxygen in 3C-SiC on Si

Simple item page
dc.contributor.authorHan, Jen_AU
dc.contributor.authorDimitrijev, Sen_AU
dc.contributor.authorKong, Fen_AU
dc.contributor.authorTanner, Pen_AU
dc.contributor.authorAtanacio, AJen_AU
dc.date.accessioned2020-12-09T21:39:55Zen_AU
dc.date.available2020-12-09T21:39:55Zen_AU
dc.date.issued2008-07-28en_AU
dc.date.statistics2020-12-04en_AU
dc.description.abstractIn this paper, we present and analyse secondary ion mass spectrometry (SIMS) measurements of oxygen concentration in 3C-SiC epitaxial layers on Si. The concentration of oxygen determined by SIMS was as high as 10 19 to 10 20 atom/cm 3 . Unlike silicon, oxygen can act as donor atoms in SiC with calculated ionization levels of 200 meV. It is generally believed that the main contribution of dopant concentration in the unintentionally doped SiC film is related to background nitrogen. Because of the high ionisation level, oxygen is not electrically active at room temperature. By measuring the conductivity of the films at higher temperatures, we extracted three donor energy levels: E A1 =79 meV, E A2 = 180 meV, and E A3 = 350 meV. The activation energy of 180 meV could be associated with the calculated ionization level for oxygen. Further analysis of the conductivity measurements at elevated temperatures will be performed to determine the electrically active donor concentration that is associated with the activation energy of 180 meV. © Copyright 2008 IEEEen_AU
dc.identifier.booktitleProceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devicesen_AU
dc.identifier.citationHan, J., Dimitrijev, S., Kong, F., Tanner, P., & Atanacio, A. (2008). SIMS investigation of oxygen in 3C-SiC on Si. In: Faraone, L.(ed), Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, Sydney, 28 July-1 August, (pp. 20-22). doi:10.1109/COMMAD.2008.4802082en_AU
dc.identifier.conferenceenddate1 August 2008en_AU
dc.identifier.conferencename2008 Conference on Optoelectronic and Microelectronic Materials and Devices, Sydney, 28 July-1 Augusten_AU
dc.identifier.conferenceplaceSydney, NSWen_AU
dc.identifier.conferencestartdate28 July 2008en_AU
dc.identifier.editorsFaraone, L.en_AU
dc.identifier.isbn9781424427161en_AU
dc.identifier.issn1097-2137en_AU
dc.identifier.pagination20-22en_AU
dc.identifier.urihttps://doi.org/10.1109/COMMAD.2008.4802082en_AU
dc.identifier.urihttps://apo.ansto.gov.au/dspace/handle/10238/10091en_AU
dc.language.isoenen_AU
dc.publisherIEEEen_AU
dc.subjectIonizationen_AU
dc.subjectMass spectroscopyen_AU
dc.subjectNitrogenen_AU
dc.subjectElectric conductivityen_AU
dc.subjectOxygenen_AU
dc.subjectSilicon compoundsen_AU
dc.subjectSilicon carbidesen_AU
dc.titleSIMS investigation of oxygen in 3C-SiC on Sien_AU
dc.typeConference Paperen_AU
Files
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.63 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Conference Publications