Parameters controlling emission of terahertz frequency electromagnetic radiation from InAs and GaAs: an ensemble Monte Carlo simulation study

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dc.contributor.authorCortie, DLen_AU
dc.contributor.authorLewis, RAen_AU
dc.date.accessioned2024-10-04T05:02:48Zen_AU
dc.date.available2024-10-04T05:02:48Zen_AU
dc.date.issued2013-03-15en_AU
dc.description.abstractThe generation, manipulation and detection of terahertz-frequency electromagnetic radiation are topics of great current theoretical and experimental interest. In particular, the coherent generation and detection of ultrashort pulses of terahertz radiation has opened up the field of terahertz time-domain spectroscopy, which permits the simultaneous measurement of amplitude and phase of the terahertz electric field. In this paper, the emission of terahertz radiation from bare semiconductor surfaces following photoexcitation by ultrashort pulses of near-infrared radiation is studied using ensemble Monte Carlo simulations. The simulation allows us to examine separately distinct scattering mechanisms and to vary the materials parameters of bandgap, absorption coefficient, effective mass, and surface potential. The narrower-gap semiconductor InAs and the wider-gap semiconductor GaAs are given as examples in which diffusion and drift processes, respectively, dominate. We find that scattering is relatively unimportant in the case of InAs but is very important in the case of GaAs. © The Electrochemical Societyen_AU
dc.description.sponsorshipThis work was supported by the Australian Research Council, the University of Wollongong, and the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists Grant #2010T2J07.en_AU
dc.identifier.citationCortie, D. L., & Lewis, R. A. (2013). Parameters controlling emission of terahertz frequency electromagnetic radiation from InAs and GaAs: an ensemble Monte Carlo simulation study. Paper presented to the PRiME 2012m Honolulu, Hawaii, October 7-12, Hawaii Convention Center and Hilton Hawaaiian Village. In ECS Transactions, 50(9), 309. doi:10.1149/05009.0309ecsten_AU
dc.identifier.conferenceenddate2012-10-12en_AU
dc.identifier.conferencenamePRiME 2012en_AU
dc.identifier.conferenceplaceHonolulu, Hawaiien_AU
dc.identifier.conferencestartdate2012-10-07en_AU
dc.identifier.isbn9781607683575en_AU
dc.identifier.issn1938-5862en_AU
dc.identifier.issn1938-6737en_AU
dc.identifier.issue9en_AU
dc.identifier.journaltitleECS Transactionsen_AU
dc.identifier.pagination309-310en_AU
dc.identifier.urihttp://dx.doi.org/10.1149/05009.0309ecsten_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15738en_AU
dc.identifier.volume50en_AU
dc.language.isoenen_AU
dc.publisherThe Electrochemical Societyen_AU
dc.subjectElectromagnetic radiationen_AU
dc.subjectMonte Carlo Methoden_AU
dc.subjectSpectroscopyen_AU
dc.subjectDiffusionen_AU
dc.subjectScatteringen_AU
dc.subjectMagnetic fieldsen_AU
dc.subjectLasersen_AU
dc.subjectPulsesen_AU
dc.titleParameters controlling emission of terahertz frequency electromagnetic radiation from InAs and GaAs: an ensemble Monte Carlo simulation studyen_AU
dc.typeConference Paperen_AU
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