Characterisation of alumina–silica films deposited by ALD

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dc.contributor.authorPrince, KEen_AU
dc.contributor.authorEvans, PJen_AU
dc.contributor.authorTriani, Gen_AU
dc.contributor.authorZhang, ZMen_AU
dc.contributor.authorBartlett, JRen_AU
dc.date.accessioned2023-10-06T04:35:19Zen_AU
dc.date.available2023-10-06T04:35:19Zen_AU
dc.date.issued2006-11-29en_AU
dc.date.statistics2023-09-14en_AU
dc.description.abstractAtomic layer deposition (ALD) is a surface mediated chemical vapour deposition method that is capable of producing uniform films over large areas. In addition, the technique has been used to deposit highly conformal films on high aspect ratio structures. The applicability of any film deposition technique is dependent upon the properties of the final product. Many applications, such as optical coatings, require films of constant composition, low levels of impurities, and adherent interfaces. The latter may derive its strength from some form of interfacial mixing but this should not have an adverse effect on film performance. Dynamic SIMS (D-SIMS) offers a versatile tool for monitoring film and interface compositions as a function of depth. Sputtering the surface with Cs+ primary ions and detecting MCs+ secondary ions was found to offer the best analytical conditions for ALD films. In the present study, D-SIMS has been used to characterise films grown with silicon-containing precursors at temperatures between 200 and 300 °C. The D-SIMS results have been complemented with data obtained from XPS and an in situ quartz crystal microbalance (QCM). This combination of analytical techniques enabled the effects of different ALD process conditions to be evaluated. With this approach, it was possible to compare the relative amounts of Si in the films, determined by SIMS and XPS, with the mass gains measured for different pulsing sequences with the QCM. © 2006 John Wiley & Sons, Ltd.en_AU
dc.identifier.citationPrince, K. E., Evans, P. J., Triani, G., Zhang, Z., & Bartlett, J. (2006). Characterisation of alumina–silica films deposited by ALD. Paper presented to 5th International Symposium on Atomic Level Characterisations for New Materials and Devices (ALC'05), Big Island, Hawaii, U.S.A, 4 December - 9 December 2005. In Surface and Interface Analysis, 38(12‐13), 1692-1695. doi.org/10.1002/sia.2422en_AU
dc.identifier.conferenceenddate2005-12-09en_AU
dc.identifier.conferencename5th International Symposium on Atomic Level Characterisations for New Materials and Devices (ALC'05)en_AU
dc.identifier.conferenceplaceHawii, U.S.A.en_AU
dc.identifier.conferencestartdate2005-12-04en_AU
dc.identifier.issn1096-9918en_AU
dc.identifier.issue12‐13en_AU
dc.identifier.journaltitleSurface and Interface Analysisen_AU
dc.identifier.pagination1692-1695en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15143en_AU
dc.identifier.volume38en_AU
dc.language.isoenen_AU
dc.publisherJohn Wiley & Sonsen_AU
dc.relation.urihttps://doi.org/10.1002/sia.2422en_AU
dc.subjectLayersen_AU
dc.subjectSilicatesen_AU
dc.subjectQuartzen_AU
dc.subjectCrystalsen_AU
dc.subjectMicrobalancesen_AU
dc.subjectThin Filmsen_AU
dc.subjectCoatingsen_AU
dc.subjectTemperature range 0273-0400 Ken_AU
dc.titleCharacterisation of alumina–silica films deposited by ALDen_AU
dc.typeConference Paperen_AU
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