Characterisation of alumina–silica films deposited by ALD

Abstract

Atomic layer deposition (ALD) is a surface mediated chemical vapour deposition method that is capable of producing uniform films over large areas. In addition, the technique has been used to deposit highly conformal films on high aspect ratio structures. The applicability of any film deposition technique is dependent upon the properties of the final product. Many applications, such as optical coatings, require films of constant composition, low levels of impurities, and adherent interfaces. The latter may derive its strength from some form of interfacial mixing but this should not have an adverse effect on film performance. Dynamic SIMS (D‐SIMS) offers a versatile tool for monitoring film and interface compositions as a function of depth. Sputtering the surface with Cs+ primary ions and detecting MCs+ secondary ions was found to offer the best analytical conditions for ALD films. In the present study, D‐SIMS has been used to characterise films grown with silicon‐containing precursors at temperatures between 200 and 300 °C. The D‐SIMS results have been complemented with data obtained from XPS and an in situ quartz crystal microbalance (QCM). This combination of analytical techniques enabled the effects of different ALD process conditions to be evaluated. With this approach, it was possible to compare the relative amounts of Si in the films, determined by SIMS and XPS, with the mass gains measured for different pulsing sequences with the QCM. © 2006 John Wiley & Sons, Ltd.