Topological insulator VxBi1.08-x Sn0.02Sb0.9Te2S as a promising n-type thermoelectric material

Simple item page
dc.contributor.authorChen, Len_AU
dc.contributor.authorZhao, WYen_AU
dc.contributor.authorLi, Men_AU
dc.contributor.authorYang, Gen_AU
dc.contributor.authorGuo, Len_AU
dc.contributor.authorBake, Aen_AU
dc.contributor.authorLiu, Pen_AU
dc.contributor.authorCortie, DLen_AU
dc.contributor.authorZheng, RKen_AU
dc.contributor.authorCheng, ZXen_AU
dc.contributor.authorWang, XLen_AU
dc.date.accessioned2024-02-27T21:41:04Zen_AU
dc.date.available2024-02-27T21:41:04Zen_AU
dc.date.issued2022-10en_AU
dc.date.statistics2024-02-28en_AU
dc.description.abstractAs one of the most important n-type thermoelectric (TE) materials, Bi2Te3 has been studied for decades, with efforts to enhance the thermoelectric performance based on element doping, band engineering, etc. In this study, we report a novel bulk-insulating topological material system as a replacement for n-type Bi2Te3 materials: V doped Bi1.08Sn0.02Sb0.9Te2S (V:BSSTS). The V:BSSTS is a bulk insulator with robust metallic topological surface states. Furthermore, the bulk band gap can be tuned by the doping level of V, which is verified by magnetotransport measurements. Large linear magnetoresistance is observed in all samples. Excellent thermoelectric performance is obtained in the V:BSSTS samples, e.g., the highest figure of merit ZT of ~ 0.8 is achieved in the 2% V doped sample (denoted as V0.02) at 530 K. The high thermoelectric performance of V:BSSTS can be attributed to two synergistic effects: (1) the low conductive secondary phases Sb2S3, and V2S3 are believed to be important scattering centers for phonons, leading to lower lattice thermal conductivity; and (2) the electrical conductivity is increased due to the high-mobility topological surface states at the boundaries. In addition, by replacing one third of costly tellurium with abundant, low-cost, and less-toxic sulfur element, the newly produced BSSTS material is inexpensive but still has comparable TE performance to the traditional Bi2Te3-based materials, which offers a cheaper plan for the electronics and thermoelectric industries. Our results demonstrate that topological materials with unique band structures can provide a new platform in the search for new high performance TE materials. © 2022 Elsevier B.V.en_AU
dc.description.sponsorshipThis work was partially supported by the Australian Research Council (ARC) through an ARC Professorial Future Fellowship project (FT 130100778, XLW) and a Linkage Infrastructure Equipment and Facilities (LIEF) Grant (LE120100069, XLW).en_AU
dc.identifier.articlenumber165550en_AU
dc.identifier.citationChen, L., Zhao, W., Li, M., Yang, G., Guo, L., Bake, A., Liu, P., Cortie, D., Zheng, R.-K., Cheng, Z., & Wang, X. (2022). Topological insulator VxBi1.08-xSn0.02Sb0.9Te2S as a promising n-type thermoelectric material. Journal of Alloys and Compounds, 918, 165550. doi:10.1016/j.jallcom.2022.165550en_AU
dc.identifier.issn0925-8388en_AU
dc.identifier.journaltitleJournal of Alloys and Compoundsen_AU
dc.identifier.pagination165550-en_AU
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2022.165550en_AU
dc.identifier.urihttps://apo.ansto.gov.au/handle/10238/15456en_AU
dc.identifier.volume918en_AU
dc.languageEnglishen_AU
dc.language.isoenen_AU
dc.publisherElsevieren_AU
dc.subjectThermoelectric materialsen_AU
dc.subjectBismuthen_AU
dc.subjectTelluriumen_AU
dc.subjectDoped materialsen_AU
dc.subjectPhononsen_AU
dc.subjectThermoelectricityen_AU
dc.subjectAmbient temperatureen_AU
dc.titleTopological insulator VxBi1.08-x Sn0.02Sb0.9Te2S as a promising n-type thermoelectric materialen_AU
dc.typeJournal Articleen_AU
Files
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.66 KB
Format:
Plain Text
Description:
Download
Collections
Journal Articles