Browsing by Author "Will, G"

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    Analysis of nitrogen-implanted tin oxide films used in dye-sensitised solar cells
    (Australian Institute of Physics, 2003-02-03) Tesfamichael, T; Will, G; Kelly, IJ; Bell, J
    Nitrogen was implanted in SnO2:F film using ion energies between 10 and 40 keV and ion dose range 1014 – 1016 cm-2. The microstructure of the film was modified by the ion implantation giving an amorphous region of various thicknesses. The amount of N was found to increase with increasing ion dose and energy. A maximum concentration of 5% N was measured in the highest ion dose and energy implanted sample.