Browsing by Author "Cazorla, C"

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item
    Copper diffusion rates and hopping pathways in superionic Cu 2Se: implications for thermoelectricity
    (SSRN, 2020-10-21) Nazrul Islam, SMK; Mayank, P; Ouyang, Y; Chen, J; Sagotra, AK; Li, M; Cortie, MB; Mole, RA; Cazorla, C; Yu, DH; Wang, XL; Robinson, RA; Cortie, DL
    The ultra-low thermal conductivity of Cu2Se is well established, but there is so far no consensus on the underlying mechanism. One proposal is that the fast-ionic diffusion of copper suppresses the acoustic phonons. The diffusion coefficients reported previously, however, differ by two orders of magnitude between the various studies and it remains unclear whether the diffusion is fast enough to impact the heat-bearing phonons. Here, a two-fold approach is used to accurately re-determine the diffusion rates. Ab-initio molecular dynamics simulations, incorporating landmark analysis techniques, were closely compared with experimental quasielastic/inelastic neutron spectroscopy. Reasonable agreement was found between these approaches, consistent with the experimental coefficient of 3.1 ± 1.3 10-5 cm2.s-1 and an activation barrier of 140 ± 60 meV. The hopping mechanism includes short 2 Å hops between tetragonal and interstitial octahedral sites. This process forms dynamic Frenkel defects, however, there is no indication of additional broadening in the density-of-states indicating the intrinsic anharmonic interactions dictate the phonon lifetimes. © Preprint article - 2023 Elsevier Inc.
  • No Thumbnail Available
    Item
    Copper diffusion rates and hopping pathways in superionic Cu2Se
    (Elsevier, 2021-08-15) Nazrul Islam, SMK; Mayank, P; Ouyang, Y; Chen, J; Sagotra, AK; Li, M; Cortie, MB; Mole, RA; Cazorla, C; Yu, DH; Wang, XL; Robinson, RA; Cortie, DL
    The ultra-low thermal conductivity of Cu2Se is well established, but so far there is no consensus on the underlying mechanism. One proposal is that the fast-ionic diffusion of copper suppresses the acoustic phonons. The diffusion coefficients reported previously, however, differ by two orders of magnitude between the various studies and it remains unclear whether the diffusion is fast enough to impact the heat-bearing phonons. Here, a two-fold approach is used to accurately re-determine the diffusion rates. Ab-initio molecular dynamics simulations, incorporating landmark analysis techniques, were closely compared with experimental quasielastic/inelastic neutron scattering. Reasonable agreement was found between these approaches, consistent with a diffusion coefficient of 3.1 ± 1.3 x 10−5 cm2.s−1 at 675 K and an activation barrier of 140 ± 60 meV. The hopping mechanism includes short 2 Å hops between tetrahedral and interstitial octahedral sites. This process forms dynamic Frenkel defects. Despite the latter processes, there is no major loss of the phonon mode intensity in the superionic state, and there is no strong correlation between the phonon spectra and the increased diffusion rates. Instead, intrinsic anharmonic phonon interactions appear to dictate the thermal conductivity above and below the superionic transition, and there is only subtle mode broadening associated with the monoclinic-cubic structural transition point, with the phonon density-of-states remaining almost constant at higher temperatures. © 2021 Acta Materialia Inc.
  • No Thumbnail Available
    Item
    Role of oxygen vacancy ordering and channel formation in tuning intercalation pseudocapacitance in Mo single-ion-implanted CeO2–x nanoflakes
    (American Chemical Society, 2021-12-07) Zheng, XR; Mofarah, SS; Cen, A; Cazorla, C; Haque, E; Chen, EY; Atanacio, AJ; Manohar, M; Vutukuri, C; Abraham, JL; Koshy, P; Sorrell, CC
    Metal oxide pseudocapacitors are limited by low electrical and ionic conductivities. The present work integrates defect engineering and architectural design to exhibit, for the first time, intercalation pseudocapacitance in CeO2–x. An engineered chronoamperometric electrochemical deposition is used to synthesize 2D CeO2–x nanoflakes as thin as ∼12 nm. Through simultaneous regulation of intrinsic and extrinsic defect concentrations, charge transfer and charge–discharge kinetics with redox and intercalation capacitances together are optimized, where reduction increases the gravimetric capacitance by 77% to 583 F g–1, exceeding the theoretical capacitance (562 F g–1). Mo ion implantation and reduction processes increase the specific capacitance by 133%, while the capacitance retention increases from 89 to 95%. The role of ion-implanted Mo6+ is critical through its interstitial solid solubility, which is not to alter the energy band diagram but to facilitate the generation of electrons and to establish the midgap states for color centers, which facilitate electron transfer across the band gap, thus enhancing n-type semiconductivity. Critically, density functional theory simulations reveal, for the first time, that the reduction causes the formation of ordered oxygen vacancies that provide an atomic channel for ion intercalation. These channels enable intercalation pseudocapacitance but also increase electrical and ionic conductivities. In addition, the associated increased active site density enhances the redox such that the 10% of the Ce3+ available for redox (surface only) increases to 35% by oxygen vacancy channels. These findings are critical for any oxide system used for energy storage systems, as they offer both architectural design and structural engineering of materials to maximize the capacitance performance by achieving accumulative surface redox and intercalation-based redox reactions during the charge/discharge process. © 2021 American Chemical Society